The last half a century has seen an enormous growth in mobile communication, reflecting into an increasingly interconnected world. Nevertheless, the incessant demand for faster data-rates requires a shift to higher carrier frequencies, which translates to the need for more ubiquitous hardware due to the increased wave propagation losses. The 7-20 GHz range, located between the sub-6 GHz (5G FR-1) and the mm-wave (5G FR-2) spectrum, provides an excellent trade-off between network capacity and coverage. Such spectrum portion constitutes a yet-to-explore third frequency range (FR-3) for future 5G applications, and is foreseen to become the 6G mid-band, devoted to crowded urban area coverage. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency low-loss, wideband, and compact passband filters for cellular radios operating at mid-band frequencies, exploiting the micro-to-nano scaling of acoustic electromechanical resonators and filters. The presented results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passive passband filters in the X-band, spanning more than 3 GHz of operation, all fabricated on the same substrate with state-of-the-art and low-complexity micro-machining process. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage, all in an extremely compact form factor, enabling the manufacturing of X-band filters and duplexers that can be integrated in mobile handsets at each antenna element. The novelty of the current results stems from the adoption of a high-crystallinity piezoelectric Sc-doped AlN thin film, together with an optimized resonator topology in terms of design and fabrication.