X-band silicon TRAPATT diodes

Ying, R.S.; Kramer, N. B.

doi:10.1109/proc.1970.7907

Cited by 11 publications

(1 citation statement)

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“…Due to a relatively long plasma extraction period the frequency of the TRAPATT generator is several times lower than in the transit time mode. The maximum frequency of the TRAPATT generator obtained experimentally is in the X-band [8,9]. TRAPATT diodes are suitable for phased-array radar systems [10].…”

Section: Introductionmentioning

confidence: 91%

Simulation of silicon n+np+, p+pn+ and Schottky TRAPATT diodes

Vyšniauskas¹,

Matukas²

2014

Lith. J. Phys.

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The plasma formation and extraction processes in silicon n + np + , p + pn + , and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. We show that the minority carrier storage depends on the TRAPATT diode structure. The most intensive minority carrier storage takes place in the n + np + diode, where holes accumulate in the n + region and electrons in the p + region. The extraction of electrons from the p + region is more rapid due to higher electron mobility compared to holes. Thus, the initial current for the next oscillation period is the hole current. In the p + pn + diode the accumulation of holes in the n + region is inferior to that in the n + np + diode due to a higher electric field in the pn + interface. The initial current in p + pn + diodes is lower and the voltage oscillation is almost periodic. The most efficient structure in respect to low minority carrier storage is a pm-type Schottky diode. In this structure the initial conditions in all voltage oscillation periods are the same and there is a quite periodic oscillation in a very wide region of the diode total current density. We show that periodic oscillation can be achieved even in the n + np + diode with optical generation of the carriers during the plasma formation and extraction period.

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Section: Introductionmentioning

confidence: 91%