X-parameter based GaN device modeling and its application to a high-efficiency PA design

Wang, Yelin; Nielsen, Troels S.; Jensen, Ole Kiel; Larsen, Torben

doi:10.1109/nemo.2014.6995691

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…In recent years, the application of X-parameter model for nonlinear circuit design have been reported. [34][35][36][37][38][39] However, in these application cases, X-parameter models are mostly used for the design of single device PA, 34,35 frequency doubler, 36 and narrowband DPAs. 37,38 In, 39 a DPA design procedure based on loadpull X-parameter model is briefly introduced, however, the bandwidth is still limited.…”

Section: Introductionmentioning

confidence: 99%

“…The X‐parameter model not only offers an approach for RF power transistor characterization, but also provides a new model option for RF circuit designers. In recent years, the application of X‐parameter model for nonlinear circuit design have been reported 34–39 . However, in these application cases, X‐parameter models are mostly used for the design of single device PA, 34,35 frequency doubler, 36 and narrowband DPAs 37,38 .…”

Section: Introductionmentioning

confidence: 99%

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Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Crupi

et al. 2022

Int J Numerical Modelling

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The design of a continuous broadband Doherty power amplifier (DPA) based on an X-parameter model is presented in this work. The broadband load-pull X-parameter model is extracted at both the package plane and current generate plane of the device under test. The model cannot only predict the fundamental and harmonic nonlinear behavioral accurately, but also find the optimal output power and drain efficiency (DE) region of the Smith chart precisely, thereby assisting DPA design. A 10-W gallium nitride packaged transistor from Wolfspeed is utilized in this design. The fabricated DPA reached a saturation output power of 44.3 dBm, with a saturation DE over 68% and a 6 dB output power back-off efficiency over 51% in the frequency range of 1.1-1.8 GHz, verifying experimentally the effectiveness of the proposed design methodology. K E Y W O R D Scontinuous broadband power amplifier, Doherty power amplifier, gallium nitride, loadpull, RF power transistor, X-parameter model

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Crupi

et al. 2022

Int J Numerical Modelling

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“…To overcome this limitation, a method is introduced to extract the PHD model using load-pull so that the model can be used under all impedance conditions, calling this model a load-dependent PHD model, 34 which has demonstrated good results in PA design. [35][36][37] However, the model requires as many impedance conditions as possible, resulting in an excessively large file size for the resulting PHD model. In reference 38, a load-reflection magnitude-dependent model has been introduced, that can greatly reduce the model file size; however, interpolation is required for impedance conditions that are not included in the extracted range.…”

Section: Introductionmentioning

confidence: 99%

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

Tang

Cai

2022

Int J RF Mic Comp-Aid Eng

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In this work, a harmonic included canonical piecewise linear (CPL) function based quadratic poly-harmonic distortion (QPHD) model is presented. The proposed model employs the framework of the standard QPHD model, making use of the CPL functions for interpolation of the amplitude of the dominant input signal. Compared with the standard QPHD model, the model described in this work is able to predict transistor behavior at different levels of input powers with one single set of model coefficients. The harmonic information has also been added in this model to make it more complete. The model is validated in terms of both DC and RF behavior through simulated data of a 10 W gallium nitride (GaN) high-electron-mobility transistor (HEMT) over a wide range of load conditions and power levels. In addition, the model is implemented in advanced design system (ADS) with frequency-defined device (FDD), and applied for a broadband power amplifier (PA) design. Chebyshev low-pass topology is used for both input and output matching network design. Finally, a broadband PA is implemented with an average power added efficiency of 66.23%, an average power of 41.09 dBm, and an average gain of 13.09 dB across the operating frequency range from 0.6 to 1.7 GHz. The simulation results of the harmonic included CPL-QPHD model are highly matched with the measurement results of the designed PA, demonstrating the feasibility of applying the proposed model for broadband PA design.

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“…Previous work has shown how single‐tube amplifiers and Doherty amplifiers may be designed via the use of X ‐parameter models 11,12 . To date, nothing has appeared in the literature describing the design of multi‐octave amplifiers based on easily extracted X ‐parameter models.…”

Section: Introductionmentioning

confidence: 99%

Design of a multi‐octave power amplifier using broadband load‐pull X‐parameters

Cai

King

et al. 2021

Int J Numerical Modelling

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The design of a multi‐octave power amplifier (PA) based on a broadband load‐pull X‐parameter model is described for the first time in this work. A 10‐W GaN package transistor is employed for model X‐parameter model extraction. Once the model is extracted, it is compared with the equivalent circuit model provided from the device manufacturer, and it is found that the X‐parameter model accuracy is comparable to that of the original circuit model. In particular, the X‐parameter model can accurately determine the areas of the load Smith chart leading to optimal output power and drain efficiency, essential considerations for extracting maximum device performance. A Chebyshev low‐pass architecture is utilized for both the input and the output matching network designs. Finally, a multi‐octave bandwidth PA, from 0.6 to 2.3 GHz, is designed. Simulation results of the broadband X‐parameter model and the measured results of the realized PA are compared, with a high fidelity match evident, thus demonstrating the efficacy of the design procedure of multi‐octave PA with broadband X‐parameters. The output power of the realized PA across the operating frequency band remains between 39.51 and 42.41 dBm, while the drain efficiency remains above 60%, reaching as high as 73% around 2 GHz. The gain of the PA is greater than 11 dB over the complete frequency band.

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X-parameter based GaN device modeling and its application to a high-efficiency PA design

Cited by 8 publications

References 8 publications

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Application ofX‐parametermodel of gallium nitride device for a continuous broadband Doherty power amplifier design

Application of harmonic includedCPL‐QPHDmodel ofGaNdevice for broadbandPAdesign

Design of a multi‐octave power amplifier using broadband load‐pull X‐parameters

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