X–ray absorption fine structure (XAFS) of Si wafer measured using total reflection X–rays

Kawai, Jun; Hayakawa, Shinjiro; Kitajima, Yoshinori; Gohshi, Yohichi

doi:10.1016/s0584-8547(98)00209-2

Cited by 10 publications

(8 citation statements)

References 62 publications

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“…The self-absorption effect concerning surface analysis with x-ray absorption fine structure measurements in grazing incidence geometry has been studied by various authors. 6,33,34 However, the investigations did not consider droplet sample geometries. Therefore, this topic needs further investigation and is currently being studied by our group.…”

Section: Resultsmentioning

confidence: 99%

Application of synchrotron‐radiation‐induced TXRF‐XANES for arsenic speciation in cucumber (Cucumis sativus L.) xylem sap

et al. 2007

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Synchrotron-radiation-induced total reflection x-ray fluorescence (SR-TXRF) analysis was used for x-ray absorption near edge structure (XANES) measurements for the speciation of arsenic in cucumber (Cucumis sativus L.) xylem sap. The objective of the presented work was to exploit the advantages of the TXRF geometry for XANES analysis. Measurements were accomplished at the bending magnet beamline L of HASYLAB, Hamburg, Germany, using a Si(111) double crystal monochromator and a silicon drift detector (SDD). Experiments were performed by growing cucumber plants in hydroponics containing arsenite [As(III)] or arsenate [As(V)] in order to identify the arsenic species of the collected xylem saps by K-edge SR-TXRF XANES. Cucumber xylem saps, as well as nutrient solutions containing arsenic in the two above-mentioned species, were analyzed and compared with arsenate and arsenite standard solutions. Arsenic speciation in xylem sap down to 30 ng/ml (30 ppb) was achieved, and no alteration of the oxidation state was observed during the measurements. Analysis of xylem saps showed that As(V) taken up from the nutrient solution was reduced to As(III). As(III) contained in the nutrient solutions was found to be partially oxidized to As(V). These results confirmed the preliminary measurements obtained with flow injection analysis (FIA) and high-performance liquid chromatography-high resolution inductively coupled plasma mass spectrometry (HPLC-HR-ICP-MS) and showed the competitive capability of SR-TXRF XANES analysis for this application.

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Section: Resultsmentioning

confidence: 99%

Application of synchrotron‐radiation‐induced TXRF‐XANES for arsenic speciation in cucumber (Cucumis sativus L.) xylem sap

et al. 2007

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“…The angle of incidence was set to 0.34 • , which is well above the critical angle of external total reflection of X-rays of the selected energy and a Si substrate at ∼0.15 • . This angle was selected on the basis of the X-ray penetration depth into the substrate to ensure that the entire arsenic distribution was probed [14][15][16]. For the sample S1 an additional GI angle (∼0.05 • ) was selected to restrict the probing depth to the top 3 nm and to exclusively examine the near surface layer and the expected arsenolite crystals on the surface of the Si wafer.…”

Section: Methodsmentioning

confidence: 99%

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Vishwanath

Demenev

Giubertoni

et al. 2015

Applied Surface Science

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a b s t r a c tHigh fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

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“…Furthermore, if the SR is monochromatized with a high-resolution crystal monochromator, instead of a wide band pass system such as a multilayer, the technique can be extended to X-ray absorption spectroscopy (XAS) to gain chemical information on a specific element of interest [25][26][27][28][29]. Monochromatization results in a flux reduction of about two orders of magnitude, but it is still sufficient for X-ray absorption near edge structure (XANES) analysis at ppb level [25,26,30,31].…”

Section: Introductionmentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) analysis is a high sensitive analytical technique that offers limits of detection in the femtogram range for most elements. Besides the analytical aspect, SR-TXRF is mainly used in combination with angle-dependent measurements and/or X-ray absorption near-edge structure (XANES) spectroscopy to gain additional information about the investigated sample. In this article, we briefly discuss the fundamentals of SR-TXRF and follow with several examples of recent research applying the above-mentioned combination of techniques to analytical problems arising from industrial applications and environmental research. ª

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X–ray absorption fine structure (XAFS) of Si wafer measured using total reflection X–rays

Cited by 10 publications

References 62 publications

Application of synchrotron‐radiation‐induced TXRF‐XANES for arsenic speciation in cucumber (Cucumis sativus L.) xylem sap

Application of synchrotron‐radiation‐induced TXRF‐XANES for arsenic speciation in cucumber (Cucumis sativus L.) xylem sap

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

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