X-ray and γ -ray spectroscopy using a 2 × 2 GaAs p+-i-n

Abstract

Article (Accepted Version) http://sro.sussex.ac.uk Lioliou, G and Barnett, A M (2021) X-ray and γ-ray spectroscopy using a 2 × 2 GaAs p+-i-n+ diode array. Nuclear Instruments

The response of thick (10 μm) AlInP x-ray and γ-ray detectors at up to 88 keV

“…Although the energy resolutions achieved with high quality cooled Si and Ge x-ray and γ-ray detectors coupled to ultra-low-noise front end electronics are close to their theoretical limits, [1][2][3] other semiconductor materials, such as SiC, 4,5 GaAs, [6][7][8][9][10] AlGaAs, [11][12][13] In 0.5 Ga 0.5 P, 14,15 and CdZnTe, 16,17 are under active development for use in the applications, which require high temperature tolerant, radiation hard, and/or high detection efficiency detectors. A variety of semiconductor radiation detectors have been, and are being, developed to meet the requirements of various applications that predominantly require the deployment of such instrumentation in harsh environments (e.g., spaceflight, nuclear science and engineering, and defense systems).…”