Spectroscopy, Luminescence and Radiation Centers in Minerals 1979
DOI: 10.1007/978-3-642-67112-8_2
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X-Ray and X-Ray Electron Spectroscopy

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Cited by 2 publications
(4 citation statements)
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“…The binding energy of the Ca 2p peak in the treated samples is shifted to a value of 346.6 eV from a value of 348.25 eV for untreated samples. This shift confirms the production of CaO which is inferred by following the reported data of Muilenberg (1979). However, the Ca 2p peak in the case of temperature treated samples exhibits a broad shoulder which probably indicates the production of other complexes.…”
Section: Electron Spectroscopy For Chemical Analysis (Esca)supporting
confidence: 88%
“…The binding energy of the Ca 2p peak in the treated samples is shifted to a value of 346.6 eV from a value of 348.25 eV for untreated samples. This shift confirms the production of CaO which is inferred by following the reported data of Muilenberg (1979). However, the Ca 2p peak in the case of temperature treated samples exhibits a broad shoulder which probably indicates the production of other complexes.…”
Section: Electron Spectroscopy For Chemical Analysis (Esca)supporting
confidence: 88%
“…The XPS spectra of Ga 3d and As 3d core levels in the GaAs substrate were obtained at 18.5 and 40.7 eV, respectively, in binding energy. Chemical shifts of Ga 3d (+1.0 eV) and As 3d (+3.0 eV) were also observed, which corresponded to Ga~O:~ and As~O:~, respectively (11), but the As 3d chemical shift of +5.0 eV corresponding to As~O~ (11) was not observed in this study. The total intensity ratio IAs,GaAs -Oxide)//Ga((;aAs *Oxide} as well as the oxide-to-GaAs intensity ratios IGaiO• and IA~CO~id~r were plotted as a function of RSE bias voltage in Fig.…”
Section: Resultscontrasting
confidence: 63%
“…On the oxide surface, a polycrystalline layer forms, whereas on the substrate an epitaxial layer grows (10)(11)(12). For this growth mode of uniform deposition on SiO2 and Si but selective epitaxy on St, the terms differential epitaxy (10) or patterned epitaxy (11) are used. Here, two cases can be distinguished: with thick oxides (oxide layer thicker than epitaxial layer, Fig.…”
Section: Silicon Layers Grown By Differential Molecular Beam Epitaxymentioning
confidence: 99%
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