X‐ray and X‐ray photoelectron spectra of vanadium oxides

Werfel, F.; Dräger, G.; Berg, U.E.P.

doi:10.1002/crat.19810160126

Cited by 38 publications

(20 citation statements)

References 19 publications

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“…[3] 512. 40 2.00 --- [4] 512.10 ---- [8] 511.70 ---- [10] VO 512.70 1.10 531. 10 ---- [5] 515.60 ---- [6] 515.30 ---- [8] 513.30 -530.50 -17.20 [10] [4] 516.20 ---- [5] 516.20 ---- [6] 515.50 3.00 --- [8] 516.40 ---- [9] 515.50 -530.00 -14.50 [10] [4] 517.00 ---- [6] 517.00 ---- [9] 517.50 -530.10 -12.60 [10] 517.20…”

Section: Resultsmentioning

confidence: 97%

“…However, an analysis of the published V2p 3/2 binding energy values for various oxidation states of vanadium indicates that there is also a large spread of the reported values. [1][2][3][4][5][6][7][8][9][10][11][12] Because of the number of possible valence states of vanadium, a number of compounds in the vanadium-oxygen system can be formed. This includes stoichiometric oxides V 2 O 5 , VO 2 , V 2 O 3 , and VO, where vanadium is present in oxidation states V 5+ , V 4+ , V 3+ , and V 2+ , respectively.…”

Section: Introductionmentioning

confidence: 99%

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Stoichiometric vanadium oxides studied by XPS

Hryha

Rutqvist

Nyborg

2011

Surface & Interface Analysis

335

179

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Recovery of vanadium oxide from steelmaking slag is of great interest for Swedish steel producers and the technique for assessing the oxidation state of vanadium is crucial in the optimization of vanadium recovery. There is a large spread in the reported values of published V2p 3/2 binding energy values for various oxidation states of vanadium. Therefore, an extensive analysis of vanadium oxide standards was performed aimed at obtaining reliable data and improved methods for the preparation of representative oxide standards. Powdered oxide standards of V 2 O 5 , VO 2 , V 2 O 3 , and VO, with purity better than 99%, were chosen. In their as-received state, all of the standards are covered by a thin layer of vanadium pentoxide that does not allow accurate evaluation of X-ray photoelectron spectroscopy spectra for vanadium oxides at lower oxidation states. Therefore, different methods for obtaining a representative surface for vanadium oxide standards were tested. The experimental results show high sensitivity of vanadium oxide standards to argon ion etching. Hence, a method to obtain a representative surface of standards by special heat treatment is proposed. Such approach was developed using a preparation chamber (furnace) attached to an X-ray photoelectron spectroscopy instrument. The annealing was performed in a vacuum at defined temperatures from 400 to 900 C for 4-24 h; the annealing parameters were selected based on thermodynamic equilibrium data for vanadium oxides. Experimental fitting parameters (peak position E and full width of half maximum of the peak) for vanadium V2p 3/2 and oxygen O1s peaks are thus obtained for stoichiometric vanadium oxides.

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Stoichiometric vanadium oxides studied by XPS

Hryha

Rutqvist

Nyborg

2011

Surface & Interface Analysis

335

179

View full text Add to dashboard Cite

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“…These TPD curves have been corrected for overlapping cracking patterns and have been adjusted for the sensitivity factors of the mass spectrometer. Table 1 [33][34][35][36][37][38][39].…”

Section: Methodsmentioning

confidence: 99%

Reactivity of monolayer V2O5 films on TiO2(110) produced via the oxidation of vapor-deposited vanadium

2003

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The growth, and reactivity of monolayer V 2 O 5 films supported on TiO 2 (110) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Oxidation of vapor-deposited vanadium in 10 -7 Torr of O 2 at 600 K produced vanadia films that contained primarily V +3 , while oxidation in 10 -3 Torr at 400 K produced films that contained primarily V +5 . The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film. AbstractThe growth, and reactivity of monolayer V 2 O 5 films supported on TiO 2 (110) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD).Oxidation of vapor-deposited vanadium in 10 -7 Torr of O 2 at 600 K produced vanadia films that contained primarily V +3 , while oxidation in 10 -3 Torr at 400 K produced films that contained primarily V +5 . The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film.

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“…Vanadium oxides show different electronic behavior depending on their valence configuration. The binary vanadium oxides V 2 O 3 1-4 (with a formal valence shell configuration of V 3d 2 ) and VO 2 1-8 (formal configuration V 3d 1 ) exhibit insulator-to-metal transitions at 160 K and 340 K, respectively.…”

Section: Introductionmentioning

confidence: 99%

RESONANT SOFT X-RAY EMISSION SPECTROSCOPY OFV₂O₃,VO₂andNaV₂O₅

et al. 2002

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Resonant soft X-ray emission (RSXE) spectra of V2O3, VO2 and NaV2O5 were recorded for a series of excitation energies at resonances of the V L-and O K-absorption band. The V L-and O K-emission in these vanadium oxide bands possess considerable overlap. By resonant excitation we can tune the energy to the absorption thresholds, thereby eliminating this overlap. Hereby we obtain the V 3d and O 2p projected density-of-states of the valence band. Resonant inelastic X-ray scattering (RIXS) is found to be weak in V2O3, which we explain as being due to its metallic character at room temperature. Vanadium dioxide (VO2), semiconducting at room temperature, shows considerable RIXS features only at the O K-emission band. Distinct RIXS structures are visible in the RSXE spectra of the insulator NaV2O5. In the emission spectra excited at the V L-thresholds of this ternary vanadium oxide, ddexcitations of the V dxy subband at an energy loss of −1.7 eV are observed. Our observation, that RIXS is stronger for insulators than for metals, should be taken advantage of for studying insulator-to-metal transitions in vanadium compounds in the future.

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X‐ray and X‐ray photoelectron spectra of vanadium oxides

Cited by 38 publications

References 19 publications

Stoichiometric vanadium oxides studied by XPS

Stoichiometric vanadium oxides studied by XPS

Reactivity of monolayer V2O5 films on TiO2(110) produced via the oxidation of vapor-deposited vanadium

RESONANT SOFT X-RAY EMISSION SPECTROSCOPY OFV₂O₃,VO₂andNaV₂O₅

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X‐ray and X‐ray photoelectron spectra of vanadium oxides

Cited by 38 publications

References 19 publications

Stoichiometric vanadium oxides studied by XPS

Stoichiometric vanadium oxides studied by XPS

Reactivity of monolayer V2O5 films on TiO2(110) produced via the oxidation of vapor-deposited vanadium

RESONANT SOFT X-RAY EMISSION SPECTROSCOPY OFV2O3,VO2andNaV2O5

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RESONANT SOFT X-RAY EMISSION SPECTROSCOPY OFV₂O₃,VO₂andNaV₂O₅