X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates

Auvray, P; Baudet, M.; Regreny, A.

doi:10.1016/0022-0248(89)90403-x

Cited by 62 publications

(15 citation statements)

References 8 publications

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“…Thus the rigid model I should be valid as supposed in principle also by some other authors for this [11,12] and other material systems [1][2][3][4][5][6][7][8][9][10]. On the other hand, for a number of specimens there resulted other, smaller as well as greater values of δD/ES.…”

Section: Discussion Of Some Examplessupporting

confidence: 57%

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Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

1993

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The effect of epitaxial misorientation on substrates having vicinal surfaces is studied using two simple geometrical models. The misorientations in two epitaxial systems, single layers and superlattices, can be partially explained by means of these models. Furthermore, the fundamentals of a new description tool for orientation relationships of epitaxial systems are outlined briefly, and two examples of application are given.

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Section: Discussion Of Some Examplessupporting

confidence: 57%

“…However, there is a lot of experimental evidence (see, e.g., [1][2][3][4][5][6][7][8][9][10][11][12][13][14]) that the epitaxial laws are an oversimplification not suitable for the detailed description of structural relations between substrate and deposit and, therefore, of their correlation with the growth process and physical properties.…”

Section: Introductionmentioning

confidence: 99%

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

1993

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“…Another mechanism [16] [17] has been observed to cause very small tilts on miscut substrates. When the film has a larger lattice constant than a miscut substrate, the film tilts to match the step heights on the surface.…”

Section: Discussionmentioning

confidence: 99%

Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2

Hellman

Liliental‐Weber

Buchanan

1997

MRS Internet j. nitride semicond. res.

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The (1 0 0) face of γ -LiAlO 2 has attracted attention as a possible substrate for GaN epitaxial growth. This is partly because this face has an excellent lattice and structural match to (1 0 0) GaN. This orientation would have a misfit of only -1.4% along the c-direction and -0.1% along the b-direction of LiAlO 2 . We find that in practice this orientation relationship does not occur; instead, (0 0 0 1) oriented GaN grows with a small tilt (0.6° towards the c-direction) between the film and substrate. Although the misfit along the substrate b direction is large (-6.3%) for this orientation, the tilt perfectly accommodates the -1.4% misfit in the c direction. We present characterization of these films by RHEED, X-ray diffraction, and TEM. We propose that the tilt is driven by a reduction of interface energy which occurs in polar, incoherent interfaces.

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“…We have adopted as a ⌬ 004 value the mean value coming from scans in the ͓110͔, ͓1Ϫ10͔, ͓Ϫ1Ϫ10͔, and ͓Ϫ110͔ directions; this way, we compensate for any misorientation of the substrate. 11 The value of ⌬a ʈ /a is given by…”

Section: ͑1͒mentioning

confidence: 99%

Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch

Hartmann

Gallas

Zhang

et al. 1999

Journal of Applied Physics

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We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL.

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X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates

Cited by 62 publications

References 8 publications

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Description and Interpretation of Systematic Deviations from Epitaxial Laws of Overgrowth

Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2

Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch

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