“…3 one can easily find conditions for desired film morphologies (VCM, LCM, or randomly interconnected microstructure). These predictions agree well with the experimental observations available for InGaP [13,35,36], GaAsSb [10,36,37] and InAsSb [17,36] (According to Ref. [38], D is assumed to be 5.2×10 -19 m 2 /s at the growth temperature) and ZnSeTe [18,39,40] systems.…”