X-Ray diffraction study and electrical and thermal transport properties of the nGeTe·mBi2Te3 homologous series compounds

Shelimova, L. E.; Константинов, П. П.; Karpinsky, O.G.; Avilov, E. S.; Kretova, M. A.; Zemskov, V. S.

doi:10.1016/s0925-8388(01)01685-1

Cited by 55 publications

(33 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The reasons for the n-type conductivity of this compound are discussed and ascribed to the predominance of the substitutional Bi Ge defects, favored by the existence of mixed cation layers in their structures, or to V Te anion vacancies. 29 Constant energy contours in the k range −0.25Å −1 k x ,k y +0.25Å −1 from −200 to +250 meV with respect to the Dirac point (E B = 260 meV) are shown in Fig. 2(c).…”

Section: Resultsmentioning

confidence: 99%

“…12 A homologous series of pseudobinary compounds, nGeTemBi 2 Te 3 , was intensively studied in terms of its thermoelectric, galvanomagnetic, and thermomagnetic properties. [27][28][29][30] Among them, GeBi 2 Te 4 was theoretically proposed as a member of the 3D TIs. [31][32][33] It was experimentally verified to be a 3D TI possessing a single TSS by an angleresolved photoemission spectroscopy (ARPES) experiment.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Observation of a highly spin-polarized topological surface state in GeBi2Te4

et al. 2012

View full text Add to dashboard Cite

Spin polarization of a topological surface state for GeBi 2 Te 4 , the newly discovered three-dimensional topological insulator, has been studied by means of state-of-the-art spin-and angle-resolved photoemission spectroscopy. It has been revealed that the disorder in the crystal has a minor effect on the surface-state spin polarization, which is 70% near the Dirac point in the bulk energy gap region (∼180 meV). This finding promises not only to realize a highly spin-polarized surface-isolated transport but also to add functionality to its thermoelectric and thermomagnetic properties.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Observation of a highly spin-polarized topological surface state in GeBi2Te4

et al. 2012

View full text Add to dashboard Cite

show abstract

“…3(d)]. For the case of p-type GBT, the increased contribution of the [63] and 0.5 W/m-K for whole GBT compounds [14]. Also, the electrical thermal conductivity is calculated using the Although the electronic structures of GBT compounds and GeTe are much different, it shows that high-dopant GBT compounds could be used in TE devices in the intermediate temperature range.…”

Section: A Crystal and Electronic Structuresmentioning

confidence: 99%

“…1, are naturally mixed-layer compounds of two distinct TE materials GeTe and Bi 2 Te 3 [10][11][12][13][14][15], having the same rhombohedral symmetry (space group R3m, 160). So, GBT compounds with (m, n) can be synthesized, and these as well as the GeTe-Sb 2 Te 3 (GST) compounds have also been used in the phase-change memory devices due to their amorphous to cubic/rhombohedral crystal phase transition upon thermal annealing [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

OptimizedZTofBi2Te3−GeTecompoun

2016

View full text Add to dashboard Cite

We predict the thermoelectric properties of layered [GeTe] m [Bi 2 Te 3 ] n (GBT) compounds (1 ≤ m ≤ 8, 1 ≤ n ≤ 3), using first-principles-Boltzmann transport calculations of the homogeneous (Bi 2 Te 3 and GeTe) data. The lattice strain and the quantum-confinement effects of compounds evolve the bandgap structures, resulting in asymmetric and large Seebeck coefficient, at high GeTe content.Using semi-empirical calculations of electron scattering rate 1/ ! , dominated by electron-acoustic phonon scattering, we reproduce reported TE properties of GBT compounds. We predict that due to small Seebeck coefficient, the GBT compounds with high n-and p-type doping (~10 20 cm -3 ), do not have high ZT near room temperature. However, we predict that the moderately-doped (~10 19 cm -3 ), p-type GBT compounds have enhanced ZT ≈ 1.4 near room temperature. *

show abstract

TEM study of the structural similarity between NaCl and rhombohedral phase of Te‐based ternary chalcogenide materials

Sun

Lee

Kim

2009

Physica Status Solidi (a)

View full text Add to dashboard Cite

Comparing the phase‐change behaviour of Ge–Bi–Te (GBT) to that of Ge–Sb–Te (GST), we have tried to verify a general relationship between a metastable NaCl and a stable rhombohedral structure that is easily incurred by stretching the cube along the body diagonal. High‐resolution transmission electron microscopy (TEM) images show that the NaCl as well as the rhombohedral GBT and GST structures are observed along specific directions. From the TEM images, we suggest an atomic model and a phase transition mechanism by lattice distortion. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

X-Ray diffraction study and electrical and thermal transport properties of the nGeTe·mBi2Te3 homologous series compounds

Cited by 55 publications

References 11 publications

Observation of a highly spin-polarized topological surface state in GeBi2Te4

Observation of a highly spin-polarized topological surface state in GeBi2Te4

OptimizedZTofBi2Te3−GeTecompoun

TEM study of the structural similarity between NaCl and rhombohedral phase of Te‐based ternary chalcogenide materials

Contact Info

Product

Resources

About