2006
DOI: 10.1002/pssb.200672563
|View full text |Cite
|
Sign up to set email alerts
|

X‐ray diffraction study of amorphous phase of BaSi2 under high pressure

Abstract: A high-pressure synchrotron X-ray diffraction study of zintl phase BaSi 2 semiconductor has been performed up to 45 GPa. The pressure-induced amorphization occurred at 13 GPa. In the amorphous phase, the Ba -Si bond distance decreased with increasing pressure, while the Ba -Ba bond distances were almost unchanged. The Rietveld refinement revealed that these distances in the crystal phase decreased with increasing pressure. By combining these results, the Ba -Si bond compressibility in both phases is almost ide… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
10
0

Year Published

2008
2008
2021
2021

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 14 publications
(10 citation statements)
references
References 5 publications
0
10
0
Order By: Relevance
“…The observed transformation of highdensity amorphous Rb 6.15 Si 46 to a low-density polyamorph during decompression indicates that the HDA-LDA transition observed for elemental a-Si extends into the binary Si-Rb alloy system and presumably into other semiconductor-metal alloy as, for example, in the Zintl phase BaSi 2 where pressure-induced amorphization has been observed to occur at around 13 GPa. 70 This observation provides a useful link between studies of PIA and polyamorphism within various compound metalloid systems such as Al-Ge, Ga-Sb, etc. 71…”
Section: ͒mentioning
confidence: 85%
“…The observed transformation of highdensity amorphous Rb 6.15 Si 46 to a low-density polyamorph during decompression indicates that the HDA-LDA transition observed for elemental a-Si extends into the binary Si-Rb alloy system and presumably into other semiconductor-metal alloy as, for example, in the Zintl phase BaSi 2 where pressure-induced amorphization has been observed to occur at around 13 GPa. 70 This observation provides a useful link between studies of PIA and polyamorphism within various compound metalloid systems such as Al-Ge, Ga-Sb, etc. 71…”
Section: ͒mentioning
confidence: 85%
“… 7 , 8 The orthorhombic BaSi 2 is stable in the ambient condition, 9 exhibits an unintentionally n-type conductivity, 10 and possesses a suitable band gap ( E g = ∼1.3 eV) for solar energy conversion. 11 14 In addition, its great potential also stems from attractive optical and electrical properties, i.e., a high light absorption coefficient (α) reaching 10 5 cm –1 for photon energy hv > 1.5 eV, 15 , 16 a long minority carrier lifetime τ (∼10–27 μs), 17 19 and essentially elemental abundance and nontoxicity. Theoretically, the attainable conversion efficiency (η) of BaSi 2 homojunction solar cells is up to 25%.…”
Section: Introductionmentioning
confidence: 99%
“…Although it is thermodynamically stable, formation of the LiSi structure is kinetically impeded relative to phases such as Li 12 Si 7 : only high-P,T synthesis could demonstrate the existence of this phase. Recent studies have investigated the high pressure behaviour of Zintl phases such as BaSi 2 that contain corrugated sheets of the silicide polyanion with three-fold coordinated silicon species [205]: the crystalline structure is lost at high pressure indicating further crystalline phases existing at high density. Pressureinduced amorphisation also occurs for NaSi that is likely accompanied by loss of Na from the structure.…”
Section: Clathrates and New"light Element" Solidsmentioning
confidence: 99%