X-Ray Dose Enhancement

Comparison of Defect Generation by irradiation and High Field Stressing in MOS Structures

“…(ii) Energy dissipation and radiolytic reactions produced by y-ray photons and high energy Compton scattered electrons will be uniformly distributed over the oxide, except possibly for some dose enhancements near the interfaces [13]. For field stressing the maximum energy dissipation occurs in the silicon next to the interface where hot electrons deposit their potential energies, since the devices have been field-stressed in accumulation.…”

Experimental Determination of the Low-Energy Spectral Component of Cobalt-60 Sources

“…[5][6][7][8][9] It is therefore clear that it is important to have some knowledge of the low-energy scattered gamma component of the particular cobalt-60 source which one is using for radiation effects testing of microelectronic devices and circuits. It is also unfortunately true, however, that this information is difficult to obtain.…”