X-ray emission from plasma generated by nanosecond laser irradiating tantalum

Torrisi, L.; Amato, Ernesto

doi:10.1080/10420150500469972

Cited by 5 publications

(5 citation statements)

References 9 publications

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“…The applied optical spectrometer can complement X-ray diagnostics by delivering data about ionisation state, temperature and electron density of plasma. Results indicate that the X-ray spectrum contains X-rays both as soft X-rays, with energy below 50 eV, and harder X-rays, with a tail energy of the order of 300 ÷ 350 eV, in agreement with previous data and with time-of-flight (TOF) measurements of ion emission from plasma [7,10]. In similar experimental conditions, in facts, previous TOF measurements of electrons and ions indicated a plasma temperature of the order of 300 eV [10], in agreement with X-ray energy measurements…”

Section: Resultssupporting

confidence: 88%

“…2, it is possible to calculate the average energy,Ē, of the X-rays collected by the detection system. The procedure gave a value ofĒ = 300 eV for the data at 532 nm and of E = 350 eV for the data at 1 064 nm, in agreement with previous data [7]. Similar average energies were obtained at irradiating Al and Cu.…”

Section: Experimental Set-upsupporting

confidence: 83%

“…obtained by a Si(Li) X-ray detector using a thin Be absorber [7]. The optical spectroscopy, given mean temperatures of the order of 20 ÷ 30 eV.…”

mentioning

confidence: 99%

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Soft X-ray radiation from metal targets at interaction of 9-ns laser pulses

et al. 2006

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A neodymium YAG laser operating at fundamental frequency (energy of 300 mJ) and at the second harmonics (at 200 mJ) and generating pulses of 9 ns duration was applied to irradiate Al, Cu, and Ta targets in the conditions of high vacuum. The plasma generated from these targets was investigated with the use of X-rays and optical diagnostics. X-rays were measured with the use of X-ray vacuum diodes (XRDs) and a semiconductor detector. The emission in the visible range was observed with the use of a CCD camera and an optical spectrometer. Different thin filters were used to choose energy ranges of observed photons. The dependence of X-ray yield on the energy of the laser and the focus position in the relation to the position of target were investigated. The CCD camera showed plasma light flashes of dimension of the order of 1 mm 3 . The optical spectrometer in the visible region detects characteristic lines of neutral and single ionised atoms. The X-ray and optical diagnostics were evaluated for their possible use for detailed characterisation and optimisation of the X ray source based on a small nanosecond laser. 79.20.Ds, 07.85.Fv PACS

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Section: Resultssupporting

confidence: 88%

Section: Experimental Set-upsupporting

confidence: 83%

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Soft X-ray radiation from metal targets at interaction of 9-ns laser pulses

et al. 2006

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“…Using thin absorbers placed in front of the detector it is possible to separate light ions from heavy ones or to separate the energetic particles from those at low energy or to evaluate the X-ray energy from the absorption coefficients of thin films calibrated in thickness [6,7].…”

Section: Jinst 11 P05009mentioning

confidence: 99%

SiC detector damage and characterization for high intensity laser-plasma diagnostics

Torrisi¹,

Cannavó²

2016

J. Inst.

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Silicon-Carbide (SiC) detectors are always more extensively employed as diagnostics in laser-generated plasma due to their remarkable properties such as their high band gap, high carrier velocity, high detection efficiency, high radiation resistance and low leakage current at room temperature. SiC detectors, in comparison with Si detectors, have the advantage of being insensitive to visible light, having low reverse current at high temperature and high radiation hardness. A similar energy resolution characterizes the two types of detectors, being 0.8% in Si and 1.0% in SiC, as measured detecting 5.8 MeV alpha particles.Generally, SiC detectors are employed as laser-plasma diagnostics in time-of-flight configuration, permitting the simultaneous detection of photons, electrons and ions based on discrimination of velocity. SiC detectors can be employed in the proportionality regime, because their response is proportional to the radiation energy deposited in the active layer. Using thin absorbers in front of the detectors makes it possible to have further information on the radiation nature, intensity and energy. Surface characterization of SiC before and after prolonged exposure to hot plasma laser generated shows the formation of bulk defects and thin film deposition on the detector surface limiting the device functionality. K: Detection of defects; Instrumentation and methods for time-of-flight (TOF) spectroscopy; Plasma diagnostics -charged-particle spectroscopy; Solid state detectors 1Corresponding author.

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“…The laser radiation transfers energy to the target electrons through different mechanisms, such as inverse Bremsstrahlung, multiple ionization, atomic excitation and de-excitation processes, heating, electron and photon emission and Coulomb explosion processes [6]. A non-equilibrium laser-generated plasma gives raises to the emission of ultraviolet (UV) and soft X-rays, low energy ions, accelerated at energies of the order of 100 eV for charge state, and electrons, escaping from the target faster with respect to the ions [7]. The plasma monitoring generally uses ion collectors, ion and electron energy analyzers and optical spectroscopy systems operating in the infrared, visible and ultraviolet (UV) regions [5,8,9].…”

Section: Introductionmentioning

confidence: 99%

Laser-plasma X-ray detection by using fast 4H-SiC interdigit and ion collector detectors

Torrisi¹,

Sciuto²,

Calcagno³

et al. 2015

J. Inst.

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Non-equilibrium plasma generated by nanosecond pulsed laser are characterized by solid state 4H-SiC interdigit Schottky diodes and by a large area ion collector detector, both connected in time-of-flight configuration. Plasma generated by irradiation of different metallic targets through a pulsed laser with a 1010 W/cm2 intensity and a 200 mJ energy, where monitored. In this paper we demonstrate that the interdigit 4H-SiC diode is able to detect ultraviolet radiation and soft X-rays, with energy of the order of 20 eV with very short rise time, of a few nanoseconds, and high efficiency, comparable with the performance of traditional large area ion collectors. Thanks to their millimetric size, solid state 4H-SiC detectors are good candidates for the fabrication of array systems for the spatial distribution measurement of plasma radiation. Moreover, owing to the their high efficiency and the interdigit geometry of front electrode, 4H-SiC diodes here proposed are suitable also for low energy ions detection.

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X-ray emission from plasma generated by nanosecond laser irradiating tantalum

Cited by 5 publications

References 9 publications

Soft X-ray radiation from metal targets at interaction of 9-ns laser pulses

Soft X-ray radiation from metal targets at interaction of 9-ns laser pulses

SiC detector damage and characterization for high intensity laser-plasma diagnostics

Laser-plasma X-ray detection by using fast 4H-SiC interdigit and ion collector detectors

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