1993
DOI: 10.1109/23.199485
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X-ray energy separation method using a CdTe semiconductor X-ray imaging sensor and photon counting method

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Cited by 23 publications
(2 citation statements)
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“…It has a relatively large band gap, 1.47 eV at 300 K, resulting in a small thermal noise. Another outstanding characteristic of this semiconductor material is its high atomic number that enables strong absorption and good detection efficiency for high-energy photons [1,2]. At the same time, CdTe detectors suffer from the crystal impurities such as Te-inclusions, dislocation networks, and twin and subgrain boundaries [3], which affect the detector performance [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…It has a relatively large band gap, 1.47 eV at 300 K, resulting in a small thermal noise. Another outstanding characteristic of this semiconductor material is its high atomic number that enables strong absorption and good detection efficiency for high-energy photons [1,2]. At the same time, CdTe detectors suffer from the crystal impurities such as Te-inclusions, dislocation networks, and twin and subgrain boundaries [3], which affect the detector performance [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…The primary efforts were focused on improving photon counting (PC) detector technology, which was the major problem of PCS-CT for decades. Several prototype PC detectors were developed based on semiconductors Si (Benini et al 1990, Arfelli et al 1997, Arfelli et al 1998, Danielsson et al 2000, Aslund et al 2007, CdTe (Tsutsui et al 1993, Schlomka et al 2008, Barber et al 2009, Cormode et al 2010, and CdZnTe (Tumer et al 2000, Cajipe et al 2004, Le and Molloi 2011, Shikhaliev and Fritz 2011. These detectors were primarily linear array detectors.…”
Section: Introductionmentioning
confidence: 99%