X-Ray Evanescent-Wave Absorption and Emission

Becker, R. S.; Golovchenko, Jene Andrew; Patel, J. R.

doi:10.1103/physrevlett.50.153

Cited by 295 publications

(110 citation statements)

References 3 publications

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“…The measured slope should actually be compared to where A,, is a circular area in the Q.y-Q,. plane with outer radius Qmax and a rectangular inner cutout with dimensions determined by the spectrometer resolution, eqn (10). The minimum dimensions of AAQ are much larger than k, and if AQ, >> AQ,.…”

Section: Watermentioning

confidence: 99%

Structure of surfaces and interfaces as studied using synchrotron radiation. Liquid surfaces

Pershan¹

1990

Faraday Discuss. Chem. Soc.

126

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The use of specular reflection of X-rays to study the structure of the liquid/vapour interfaces along the direction normal to the surface is described. If RF(6) is the theoretical Fresnel reflection law for X-rays incident on an ideal flat surface at an angle 8, and R ( 8) is the measured reflectivity from the true surface, the ratio R ( B ) / R , ( B ) is a measure of the electron density along the surface normal; i e .

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Section: Watermentioning

confidence: 99%

Structure of surfaces and interfaces as studied using synchrotron radiation. Liquid surfaces

Pershan¹

1990

Faraday Discuss. Chem. Soc.

126

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“…[1][2][3] In contrast to GI-XRF geometry, it is also possible to excite under normal incidence and detect the fluorescence radiation under glancing angles. 1,[4][5][6][7][8] This method is called "grazing exit," [8][9][10][11] "grazing emission" ͑GE-XRF͒, [5][6][7]12 or "glancing-takeoff" XRF 13,14 and is theoretically based on the reciprocity theorem. 4 The interference in this case is not between the exciting primary and reflected beam but among the superposition of the "primary" fluorescent waves emitted from the sample and reflected fluorescent radiation when observed under the critical angle of total reflection.…”

Section: Introductionmentioning

confidence: 99%

Grazing exit versus grazing incidence geometry for x-ray absorption near edge structure analysis of arsenic traces

Meirer

Pepponi

Streli

et al. 2009

Journal of Applied Physics

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In the presented study the grazing exit x-ray fluorescence was tested for its applicability to x-ray absorption near edge structure analysis of arsenic in droplet samples. The experimental results have been compared to the findings of former analyses of the same samples using a grazing incidence ͑GI͒ setup to compare the performance of both geometries. Furthermore, the investigations were accomplished to gain a better understanding of the so called self-absorption effect, which was observed and investigated in previous studies using a GI geometry. It was suggested that a normal incidence-grazing-exit geometry would not suffer from self-absorption effects in x-ray absorption fine structure ͑XAFS͒ analysis due to the minimized path length of the incident beam through the sample. The results proved this assumption and in turn confirmed the occurrence of the self-absorption effect for GI geometry. Due to its lower sensitivity it is difficult to apply the GE geometry to XAFS analysis of trace amounts ͑few nanograms͒ of samples but the technique is well suited for the analysis of small amounts of concentrated samples.

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“…The equivalence between these two geometries was first shown by [9] who used the principle of microscopic reversibility which states that grazing incidence and grazing emission type experiments provide identical results if the energies of interest are the same. If this condition is verified the depth distributions of atoms contributing to the experimental result are identical.…”

Section: Principles Of Gexrfmentioning

confidence: 99%

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Kayser

Banaś

Cao

et al. 2010

Spectrochimica Acta Part B: Atomic Spectroscopy

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The synchrotron based high resolution grazing emission x-ray fluorescence (GEXRF) technique is used to extract the distribution of Al ions which were implanted with a dose of 10 16 atoms/cm 2 in Si wafers with different energies ranging between 1 and 100 keV. In this purpose an angular scan around the critical angle was made. In addition special efforts were made to improve the experimental conditions. The extracted depth distributions are compared to theoretical calculations of the depth distributions resulting from ion implantations and a good agreement was found. Ion implantation is indeed a useful tool in the semiconductor industry, especially in the production of integrated circuits and junctions. The high-resolution GEXRF technique could support further developments in this domain.

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X-Ray Evanescent-Wave Absorption and Emission

Cited by 295 publications

References 3 publications

Structure of surfaces and interfaces as studied using synchrotron radiation. Liquid surfaces

Structure of surfaces and interfaces as studied using synchrotron radiation. Liquid surfaces

Grazing exit versus grazing incidence geometry for x-ray absorption near edge structure analysis of arsenic traces

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

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