X-Ray Imaging with a Silicon Drift Detector Energy Dispersive Spectrometer

Brodusch, Nicolas; Demers, Hendrix; Gauvin, Raynald

doi:10.1007/978-981-10-4433-5_7

Cited by 2 publications

(3 citation statements)

References 23 publications

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“…The behavior is different for cathodoluminescence. The throughput count rate is about the same for all shaping times (see figure [8][9]. Note that because of variations in the filament brightness, the curves are plotted as a function of iodine count rate.…”

Section: Process Timementioning

confidence: 96%

“…In the middle of 2000s came silicon drift detectors, which work at higher temperature and higher count rates [1][2][3]. During the last 20 years, silicon drift detectors were improved [4][5]: increase of sensor active area [6], new geometries decreasing detector -specimen distance [7][8] and new materials for the window or windowless detectors [4,[9][10] allowed to improve the spatial resolution and the detection of low energy X-rays. EDX detectors are made from silicon, a material in which X-ray photons but also visible light can create electron-hole pairs, which are further collected to give the useful signal.…”

Section: Introductionmentioning

confidence: 99%

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Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Béranger¹

2019

AJPA

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Energy dispersive X-Ray detectors are among the most common tools installed on scanning electron microscopes and, as they are sensitive to light, they can be used to get panchromatic cathodoluminescence information. This article presents practical considerations about the parameters to choose to obtain a good cathodoluminescence signal on a silicon drift detector. Probe current is the most important but other parameters of electron microscope and energy dispersive X-Ray detector are also explored. Filament brightness, if not fixed, influences the number of electrons incident on the sample and modifies cathodoluminescence response. Beam voltage and working distance must be adapted to the sample and to the electron microscope geometry. Acquisition and shaping times are important parameters for spectrum quality: the high sensitivity of silicon drift detector to light allows the use of low acquisition times and high shaping times. As cathodoluminescent materials are mostly high band gap materials, charge effects can influence their response and the size of the acquisition area must be carefully chosen. The influence of all these parameters is studied through two scintillating materials. Some examples of application are described to show the potential of this method. They include localization of luminescent particles, a demonstration of the effect of strong electron beam on a needle of material and the characterization of light emitted by a structural defect in a scintillator material.

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Section: Process Timementioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Béranger¹

2019

AJPA

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“…Additionally, a comparison is made between a traditional side-mounted EDS 30 mm² silicon drift detector (SDD) and a newly developed annular EDS 4 × 15 mm 2 SDD situated between the pole piece and the sample. The new detector configuration achieves a much higher solid angle and significantly higher X-ray count rates than previous designs (Brodusch et al, 2018). This reduces the needed acquisition time without sacrificing counts.…”

Section: Introductionmentioning

confidence: 95%

Analysis of Electron Transparent Beam-Sensitive Samples Using Scanning Electron Microscopy Coupled With Energy-Dispersive X-ray Spectroscopy

et al. 2020

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Scanning electron microscopy, coupled with energy-dispersive X-ray spectroscopy (EDS), is a powerful tool used in many scientific fields. It can provide nanoscale images, allowing size and morphology measurements, as well as provide information on the spatial distribution of elements in a sample. This study compares the capabilities of a traditional EDS detector with a recently developed annular EDS detector when analyzing electron transparent and beam-sensitive NaCl particles on a TEM grid. The optimal settings for single particle analysis are identified in order to minimize beam damage and optimize sample throughput via the choice of acceleration voltage, EDS acquisition time, and quantification model. Here, a linear combination of two models is used to bridge results for particle sizes, which are neither bulk nor sufficiently thin to assume electron transparent. Additionally, we show that the increased count rate obtainable with the annular detector enables mapping as a viable analysis strategy compared with feature detection methods, which only scan segmented regions. Finally, we discuss advantages and disadvantages of the two analysis strategies.

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X-Ray Imaging with a Silicon Drift Detector Energy Dispersive Spectrometer

Cited by 2 publications

References 23 publications

Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Study on the Use of Silicon Drift Detector to Get Information on Light Emitted by Luminescent Materials

Analysis of Electron Transparent Beam-Sensitive Samples Using Scanning Electron Microscopy Coupled With Energy-Dispersive X-ray Spectroscopy

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