X-ray investigation of crystal defects in Czochralski grown InP single crystals

The capacitive response of deep Fe acceptors in a semi-insulating n-type Fe-doped InP Schottky barrier has been investigated. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics over the frequency range 0.06–100 kHz are measured at 300, 317, and 335 K. Great frequency dispersion is observed in C and G. The reverse bias dependencies of C and (G−G0) are shown to be very weak at high frequencies, where G0 is the dc conductance. As measuring frequency is lowered, (G−G0) decreases but C increases considerably. At low frequencies, the bias dependencies of C and (G−G0) are observed and measured 1/C2 versus reverse bias curves are found to be straight lines. It is shown that at low frequencies, C and (G−G0) take maxima near zero bias and rapidly decrease in a forward bias region. As temperature increases, the frequency region in which such low-frequency characteristics are found extends more widely into a high-frequency range. Theoretical calculations of C and (G−G0) are also carried out. The results are compared with experimental ones. Observed variations of C and G with frequency, bias voltage, and temperature are well explained in terms of the delayed response of deep Fe acceptors.

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X-ray investigation of crystal defects in Czochralski grown InP single crystals

Cited by 2 publications

References 21 publications

Inclusion-like defects in Czochralski grown InP single crystals

Inclusion-like defects in Czochralski grown InP single crystals

Effects of deep Fe acceptors on the impedance of a semi-insulating n-type Fe-doped InP Schottky barrier

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