X-ray irradiation induced effects on the chemical and electronic properties of MoO 3 thin films

Liao, Xian; Jeong, Ah Reum; Wilks, Regan G.; Wiesner, S.; Rusu, M.; Bär, Marcus

doi:10.1016/j.elspec.2016.08.004

Cited by 23 publications

(23 citation statements)

References 24 publications

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“…MoO 3 is known to suffer X-ray beam-induced changes, 20 however, measurement parameters have been optimized at the beginning of the experiment to minimize these effects. In fact, after this optimization, no indication of beam damage was observed before and after the measurement sequence (see Figure S2) and thus, we clearly attribute the observed redistribution of spectral intensity to the annealing (and not due to X-ray irradiation).…”

Section: Resultsmentioning

confidence: 99%

“…The individual regions in these spectra are discussed in detail in our previous publication. 20 The majority of the spectral intensity (in particular between BEs of 10 and 2.5 eV) has O 2p character. Under both conditions, the VBM position as derived by linear approximation of the leading edge is determined to be 3.00 ± 0.10 eV below E F independent of annealing, which is in agreement with VBM values reported for (nearly) stoichiometric MoO 3 films.…”

Section: Resultsmentioning

confidence: 99%

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Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

et al. 2019

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The chemical and electronic structure of MoO 3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO 3 . At moderate temperatures (120–200 °C), we find spectral evidence for the formation of Mo 5+ and at higher temperatures (>165 °C) also of Mo 4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states. A clear relation between annealing temperature and the induced changes in the chemical and electronic structure suggests this approach as a route for deliberate tuning of MoO 3 thin-film properties.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

et al. 2019

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“…The leaching of the oxygen from the MoO x layer may be induced or enhanced as a result of the X-ray irradiation; it has recently been shown that the levels of X-ray exposure used in the current study can lead to strong reduction of MoO 3 thin lms in UHV. 37 The third peak contribution (i.e., Sn III ) is located at a BE of (493.7 AE 0.1) eV, ascribed to metallic Sn. [30][31][32][33][34][35][36] The Sn 3d 3/2 spectrum of the "25 s" sample was the only one in the series to not exhibit a Sn III contribution (i.e., presence of metallic Sn, Sn 0 ), the reason for which will be discussed below.…”

Section: Resultsmentioning

confidence: 99%

Preparation and in-system study of SnCl₂precursor layers: towards vacuum-based synthesis of Pb-free perovskites

et al. 2018

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“…The combined beamline and electron energy analyser resolution was better than 350 meV. The interaction of the photon beam with the sample can cause changes to the spectra of MoO 3 [15] and DMMP (i.e. beam damage), as we have characterized previously [6].…”

Section: Ambient Pressure X-ray Photoelectron Spectroscopymentioning

confidence: 97%

Thermal desorption of dimethyl methylphosphonate from MoO₃

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et al. 2017

Catalysis, Structure & Reactivity

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Organophosphonates are used as chemical warfare agents, pesticides, and corrosion inhibitors. New materials for the sorption, detection, and decomposition of these compounds are urgently needed. To facilitate materials and application innovation, a better understanding of the interactions between organophosphonates and surfaces is required. To this end, we have used diffuse reflectance infrared Fourier transform spectroscopy to investigate the adsorption geometry of dimethyl methylphosphonate (DMMP) on MoO 3 , a material used in chemical warfare agent filtration devices. We further applied ambient pressure X-ray photoelectron spectroscopy and temperature programmed desorption to study the adsorption and desorption of DMMP. While DMMP adsorbs intact on MoO 3 , desorption depends on coverage and partial pressure. At low coverages under UHV conditions, the intact adsorption is reversible. Decomposition occurs with higher coverages, as evidenced by PCH x and PO x decomposition products on the MoO 3 surface. Heating under mTorr partial pressures of DMMP results in product accumulation.

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X-ray irradiation induced effects on the chemical and electronic properties of MoO 3 thin films

Cited by 23 publications

References 24 publications

Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Preparation and in-system study of SnCl₂precursor layers: towards vacuum-based synthesis of Pb-free perovskites

Thermal desorption of dimethyl methylphosphonate from MoO₃

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X-ray irradiation induced effects on the chemical and electronic properties of MoO 3 thin films

Cited by 23 publications

References 24 publications

Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Preparation and in-system study of SnCl2precursor layers: towards vacuum-based synthesis of Pb-free perovskites

Thermal desorption of dimethyl methylphosphonate from MoO3

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Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Tunability of MoO₃ Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Preparation and in-system study of SnCl₂precursor layers: towards vacuum-based synthesis of Pb-free perovskites

Thermal desorption of dimethyl methylphosphonate from MoO₃