X-ray measurement of strain in Co5Ce permanent magnet powders

X-ray diffraction

“…Stress measurements in thin single-crystal silicon films (81) and thin gold films (103) as well as thickness measurements of approximately 300-Á thick gold films ( 156) have been reported. The x-ray measurement of strain in cobalt-cerium permanent magnet powders (145), lattice strain induced by the diffusion of P or B into the 111 surface of silicon (147), the relation between stackingfault energy and x-ray measurements of stacking fault probability and microstrain (138), and a high precision method of x-ray diffraction residual stress analysis (11) are representative of these types of studies. Other studies on thin films include that of Wallace and Ward (181) who have reported on Laue and oscillation techniques for the analysis of epitaxic thin films, that of Light et al (101), who investigated the structure of thin lead oxide layers, that of Houska (69) who used x-ray diffraction measurements to obtain composition profiles in diffused films as well as simultaneous measurement of structural changes associated with the diffusion processes, and the interesting study of strong x-ray interferences obtained on specular reflection of monochromatic x-rays by thin films of amorphous silicon on sapphire substrates under glancing angles slightly above the critical angle for total reflection reported by Segmueller (155).…”