“…The latter mechanism assumes that chemical modifiers poison Si re-entrant grooves, thereby deactivating anisotropic TPRE growth. To verify possible modification mechanisms, detailed investigations on modifier distributions have been performed using high-resolution characterization techniques [17,23], such as three-dimensional atom probe tomography (APT) and transmission electron microscopy (TEM) [1,24,25]. A recent study by high-resolution TEM and atomic-resolution scanning electron microscopy (SEM) [26] revealed that Sr atoms are adsorbed along the h1 1 2i growth directions of Si crystals and/or at the intersections of multiple Si twins, thus evidencing an important role of the Sr modifier in the IIT growth and the restricted TPRE growth.…”