X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

Левин, М. Н.; Tatarintsev, A. V.; Makarenko, V. A.; Gitlin, V. R.

doi:10.1134/s1063739706050088

Cited by 8 publications

(5 citation statements)

References 24 publications

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“…The following system of equations describes the radiation dynamics of electric charge distribution in the dielectric layer with thickness d of MIS [6][7][8][9][10][11][12][13][14]15]. These equations take into account tunnelling discharge as well.…”

Section: The Modelmentioning

confidence: 99%

“…The effect of ionizing radiation on MOS structures was studied and modeled in a number of investigations [1][2][3][4][5][6][7][8][9][10][11][12][13]. At first, these were simplified models in which the distribution of the space charge caused by ionizing radiation was given in the form of some dependences at a number of constraints [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…In the model of Gurtov et al [5], the possibility of tunneling carriers trapped in high fields was taken into account. In the model of Levin and co-authors [6], along with the process of accumulation of an induced charge in a dielectric, the subsequent charge relaxation due to tunneling discharge and thermal emission from shallow and deep traps was considered. Attempts of the quantitative consideration of the formation of surface states at the interface between semiconductor silicon and oxide were made in [1,2,[7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…In this way we developed both physical and mathematical models of radiation-induced charge accumulation within the oxide layer and surface states due to irradiation with X-rays and the subsequent charge relaxation by means of tunnel discharge. Developed mathematical model is the system of equations [6,14] describing the free electron and hole kinetics, the kinetics of hole charge accumulated on the shallow and deep trap levels and the electric field intensity in dielectric layer. The tunnel discharge of the captured hole charge in the dielectric layer is described in [15].…”

Section: Introductionmentioning

confidence: 99%

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Modeling of Radiation Effects in the MIS Devices

Zayats¹

2017

NANO

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Abstract:We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulatorsemiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.

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Section: The Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Modeling of Radiation Effects in the MIS Devices

Zayats¹

2017

NANO

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“…The mathematical model is basically a system of partial dierential equations [1,2] describing movement of free electrons and holes, ordinary differential equations reecting the kinetics of charge accumulation on the hole trap levels, and the Poisson equation, which allows to compute the resulting electric eld within the oxide layer. Accumulated charge in the dielectric layer discharging by the tunnelling mechanism is described by ordinary dierential equations [3].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Radiation Effects in SiO₂/Si Structures

et al. 2015

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The spacetime evolution of electric charge induced in the dielectric layer of simulated metalinsulator semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the ecient numerical method. The obtained simulation results correlate well with the respective data presented in other scientic publications.

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