X-ray photoelectron diffraction study of YbAs/GaAs(001) and ScAs/GaAs(001) heterostructures

Abstract

Articles you may be interested in X-ray photoelectron spectroscopy study of self-assembled monolayers of alkanethiols on (001) GaAsPhotoluminescence and xray photoelectron spectroscopy study of Spassivated InGaAs(001) Sublattice orientation dilemma: A reflection highenergy electron diffraction and xray photoelectron diffraction study of GaAs growth on vicinal Si(001) surfaces J. Polar angle distributions of core level photoemission intensities recorded on YbAs/GaAs(OOl) and ScAs/GaAs(OOl) heterostructures are presented. They allow lirst the surface roughness of thin YbAs overlayers to be seen, second to estimate the tetragonal distortion of a strained ScAs film and, third, the most interesting point, to demonstrate in a direct fashion that the mixed @b-As) (010) planes of YbAs grow in the prolongation of the As planes of GaAs. The results are compared to those obtained by other authors with various techniques. The main advantage of the photoelectron diffraction method over the other techniques is that it can be performed on very thin epitaxial films (some monolayers) directly in situ under ultrahigh vacuum. 5218

Photoemission forward scattering from ErAs(100)/GaAs(100)

“…3b shows ratio of Yb 4f and Ga 3d core level photoemission intensities (n) and Ga 3d intensity (o) as a function of emission angle, adapted from the work of Lépine et al [8]. For these 8.2 monolayer thin films of YbAs(100) deposited on GaAs(100), there are very similar indications of forward scattering [8] also at angles close to the h103i and h101i directions.…”

“…(3), to forward scattering [8], leading to drops in the Er 4d/Ga 3s and Er 4d/As 3p core level intensity ratios about 18j and 45j off normal or along the h103i and h101i directions, respectively. This is very similar to the photoelectron diffraction effects observed with YbAs on GaAs [8]. Fig.…”

“…Photoelectron diffraction [5][6][7] provides a viable alternative for this type of heteroepitaxial growth. Indeed photoelectron diffraction was successfully exploited to investigate the YbAs(100)/ GaAs(100) and ScAs(100)/GaAs(100) heterostructures [8].…”

“…For comparison, we have adapted from Ref. [8] the experimental intensity ratios of the Yb 4f to Ga 3d core level photoemission intensities (n), while the integral intensities from Ga 3d (o) are shown as a function of emission angle (b), for an YbAs(100) film of 8.2 monolayers thickness on GaAs(100). even the Er/As core level photoemission intensity ratio with changing emission angle confirms that there is registry of the substrate and thin film overlayer, at the buried interface.…”

Electronic structure of ErAs(100)

“…The structural integrity was also confirmed by photoelectron diffraction ͑forward scattering͒, and is similar to the photoelectron diffraction effects observed for YbAs on GaAs. 27 Angle-resolved photoemission experiments were performed at the Center for Advanced Microstructures and Devices, using the 3 meter toroidal grating monochromator ͑3-m TGM͒ beam line. The UHV chamber, used for angleresolved photoemission, is equipped with an electron energy analyzer with an angular acceptance of Ϯ1°and a combined ͑including the monochromator͒ energy resolution of 150 meV or better.…”