X-ray reflectivity study on TiN/Ti/Si structures before and after annealing

Santucci, S.; Giuliani, Pierandrea; Picozzi, P.; Phani, A.R.; Biase, M. De; Alfonsetti, R.; Moccia, G.; Missori, Mauro

doi:10.1016/s0040-6090(99)00891-3

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…The pattern was formed by using PR (UV135) at the condition of test #3 including SiON as BARC layer and SiO 2 of 5.0 nm as a barrier layer of SiON and PR after preparing the sub-layer for 0.13-μm-device. The increased interface roughness reduces the oscillation in the reflectivity curve rapidly [14]; therefore, the reflectivity control is difficult for the conditions of test #4, #5, and #6 due to the disappearance of oscillation at these conditions. Figure 6 shows the cross-sectional SEM images of BARC / PR interface for 0.13-μm-device demonstrated experimentally with the optimum condition (test #3) obtained by the computational simulations for optimizing thickness, refractive index and absorption coefficient of SiON film for the minimum reflectivity; this had the accurate CD control successfully without any standing wave.…”

Section: Resultsmentioning

confidence: 99%

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Kim¹,

Kim²

2014

Transactions on Electrical and Electronic Materials

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More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

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Section: Resultsmentioning

confidence: 99%

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Kim¹,

Kim²

2014

Transactions on Electrical and Electronic Materials

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show abstract

“…This leads to an increased and accumulated roughness as the growth of the multilayer proceeds [32]. Due to this, the radiation reflected from the surface does not interfere constructively with the radiation reflected from the interface, causing the disappearance of reflection peaks [55]. At V B = −200 V, maximum order of reflections (5th order) were observed, indicating a well-defined periodicity of the constituent layers.…”

Section: Effect Of Substrate Bias On the Interface Propertiesmentioning

confidence: 99%

Investigation of interface properties of sputter deposited TiN/CrN superlattices by low angle x-ray reflectivity

Barshilia

Selvakumar

Rajam

et al. 2008

J. Phys. D: Appl. Phys.

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Approximately 1.8 µm thick nanolayered multilayer coatings of TiN/CrN (also known as superlattices) were deposited on silicon (1 0 0) substrates at different modulation wavelengths (4.6–12.8 nm), substrate temperatures (50–400 °C) and substrate bias voltages (−50 to −200 V) using a reactive direct current magnetron sputtering system. The x-ray reflectivity (XRR) technique was employed to determine various properties of the multilayers such as interface roughness, surface roughness, electron density, critical angle and individual layer thicknesses. The modulation wavelengths of the TiN/CrN superlattice coatings were calculated using a modified Bragg's law. Furthermore, the experimental XRR patterns were simulated using theoretically generated patterns and a good fit was obtained for a three layer model, i.e. (1) top surface roughness layer, (2) TiN/CrN multilayer coating (approximately 1.8 µm) and (3) Ti interlayer (∼0.5 µm) at the film–substrate interface. For the superlattice coatings prepared at a modulation wavelength of 9.7 nm, a substrate bias of −200 V and a substrate temperature of 400 °C the XRR patterns showed Bragg reflections up to 5th order, indicating well-defined periodicity of the constituent layers and relatively sharp interfaces. The simulation showed that the superlattice coatings prepared under the above conditions exhibited low surface and interface roughnesses. We also present the effect of substrate temperature and substrate bias, which are critical parameters for controlling the superlattice properties, onto the various interface properties of TiN/CrN superlattices.

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Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology

Gau,

Chang,

Chen

et al. 2024

Solid-State Electronics

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X-ray reflectivity study on TiN/Ti/Si structures before and after annealing

Cited by 5 publications

References 13 publications

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Investigation of interface properties of sputter deposited TiN/CrN superlattices by low angle x-ray reflectivity

Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology

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