X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

Кукушкин, С. А.; Nussupov, K. Kh.; Осипов, А. В.; Бейсенханов, Н. Б.; Bakranova, Dina

doi:10.1134/s1063783417050195

Cited by 12 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition to the two peaks TO and LO of the 3C-SiC, there is an additional peak at 952 cm −1 which we associate with the silicon vacancies that have transited to a stable state denoted as C 4 V. The DFT modeling has shown that it is exactly the oscillation frequency of the C–C bonds arising in the 3C-SiC when a C atom jumps over to the place of the silicon vacancy [ 18 ]. Previously, by different research teams, this line was repeatedly observed in the infrared spectra (both transmission and reflection, which is much more sensitive than the Raman spectroscopy) of the 3C-SiC samples produced by the MCSA but with a significantly lower concentration of vacancies [ 19 ].…”

Section: Resultsmentioning

confidence: 89%

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Кукушкин¹,

Осипов²

2021

Materials

View full text Add to dashboard Cite

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed “chemical selection” during this transformation get into the SiC. As the process of SiC synthesis proceeds at temperatures of ~1350 °C, thermal fluctuations in the SiC force the carbon atom C adjacent to the vacancy to jump to its place. In this case, an almost flat cluster of four C atoms and an additional void right under it are formed. This stable state of the vacancy, by analogy with NV centers in diamond, is designated as a C4V center. The C4V centers in the grown 3C-SiC were detected experimentally by Raman spectroscopy and spectroscopic ellipsometry. Calculations performed by methods of density-functional theory have revealed that the C4V centers have a magnetic moment equal to the Bohr magneton μB and lead to spin polarization in the SiC if the concentration of C4V centers is sufficiently high.

show abstract

Section: Resultsmentioning

confidence: 89%

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Кукушкин¹,

Осипов²

2021

Materials

View full text Add to dashboard Cite

show abstract

“…For comparison, we examined SiC samples grown on Si using the standard CVD method by Advanced Epi (https://advancedepi.com/sic/). It should be noted that SiC films grown on Si by the atom substitution method were studied in the works [17,18] using the X-ray reflectometry method. In these works, it was found that SiC films consist of a number of layers parallel to the substrate, resembling a " puff pastry pie" with the composition varying from the surface towards the Si substrate.…”

Section: Features Of the Surface Structure Of Sic On Si Samples Grown...mentioning

confidence: 99%

“…In these works, it was found that SiC films consist of a number of layers parallel to the substrate, resembling a " puff pastry pie" with the composition varying from the surface towards the Si substrate. However, the evolution of roughness was not studied in these works, and the technique for measuring the TER was different [17,18].…”

Section: Features Of the Surface Structure Of Sic On Si Samples Grown...mentioning

confidence: 99%

Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

Кукушкін

Осипов

Osipova

et al. 2022

Physics of the Solid State

View full text Add to dashboard Cite

X-ray diffraction and total external reflection of X-rays (X-ray reflectometry) methods were used to study the successive stages of synthesis of epitaxial SiC films on Si (100) X-ray diffraction and total external X-ray reflection (XRD) methods were used to study successive stages of synthesis of epitaxial SiC films on Si (100) surfaces, (110) and (111) surfaces by the atom substitution method. The data on the transformation evolution of (100) surfaces were studied, (110) and (111) Si, into SiC surfaces. A comparative analysis of the X-ray structural quality of the SiC layers grown on Si by the atom substitution method with the quality of SiC layers grown by Advanced Epi by the standard CVD method. A modified technique for the total outer X-ray reflection method, based on measurements of the intensity of the reflected X-rays using a special parabolic mirror. It is shown that the method of total external reflection method makes it possible to obtain important information about the degree of surface roughness of SiC layers, the evolution of their crystal structure and plasmon energy in the process of Si to SiC conversion. Keywords: total external reflection, X-ray reflectometry, silicon carbide, plasmons.

show abstract

SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors

Кукушкін

Осипов

Redkov

2022

Advanced Structured Materials

View full text Add to dashboard Cite

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

Cited by 12 publications

References 18 publications

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

SiC/Si as a New Platform for Growth of Wide-Bandgap Semiconductors

Contact Info

Product

Resources

About