X-ray reflectometry of the specific features of structural distortions of He+-implanted Si(001) surface layers

Lomov, A. A.; Myakon’kikh, A. V.; Руденко, К. В.; Chesnokov, Yu. M.

doi:10.1134/s1063774514020138

Cited by 7 publications

(1 citation statement)

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“…Recently, it was shown (Lomov et al, 2014) that highresolution X-ray reflectometry (HRXRR) on a laboratory diffractometer can be successfully used for diagnostics of the surface layers in silicon substrates after low-energy (2-5 keV) He + PIII. The layers were shown to have a complex structure which included an amorphized layer, a layer containing encapsulated He-filled bubbles and an elastically strained damaged crystalline layer.…”

Section: Introductionmentioning

confidence: 99%

The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

et al. 2017

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The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He+plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffraction, transmission electron microscopy and atomic force microscopy. The formation of a three-layer structure was observed (an amorphous a-SiOxlayer at the surface, an amorphous a-Si layer and a heavily damaged tensile-strained crystalline c-Si layer), which remained after annealing. Helium-filled bubbles were observed in the as-implanted sample. The influence of annealing on the evolution of the three-layer structure and the bubbles is considered. The bubbles are shown to grow after annealing. Their characteristic size is determined to be in the range of 5–20 nm. Large helium-filled bubbles are located in the amorphous a-Si layer. Small bubbles form inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in the c-Si layer.

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Section: Introductionmentioning

confidence: 99%

The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

et al. 2017

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Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation

Lomov

Щербачев

Miakonkikh

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

Lomov¹,

Щербачев

Chesnokov

et al. 2016

SPIE Proceedings

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X-ray reflectometry of the specific features of structural distortions of He+-implanted Si(001) surface layers

Cited by 7 publications

References 9 publications

The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation

Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

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X-ray reflectometry of the specific features of structural distortions of He+-implanted Si(001) surface layers

Cited by 7 publications

References 9 publications

The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

The microstructure of Si surface layers after plasma-immersion He+ion implantation and subsequent thermal annealing

Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation

Evolution of structural properties of Si(001) subsurface layer containing He bubbles by low temperature annealing

Contact Info

Product

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The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

The microstructure of Si surface layers after plasma-immersion He⁺ion implantation and subsequent thermal annealing

Structural evolution of thermal annealed Si(0 0 1) surface layers fabricated by plasma immersion He+ implantation