X-ray response evaluation in subpixel level for X-ray SOI pixel detectors

Negishi, Kousuke; Kohmura, Takayoshi; Hagino, Kouichi; Kogiso, Taku; Oono, Kenji; Yarita, Keigo; Sasaki, Akinori; Tamasawa, Koki; Tsuru, Takeshi Go; Tanaka, Takaaki; Matsumura, Hideaki; Tachibana, Katsuhiro; Hayashi, Hideki; Harada, Sodai; Mori, Koji; Takeda, Ayaki; Nishioka, Yusuke; Takebayashi, Nobuaki; Yokoyama, Shoma; Fukuda, Kohei; Arai, Y.; Miyoshi, T.; Kishimoto, Shunji; Kurachi, Ikuo

doi:10.1016/j.nima.2018.06.073

Cited by 9 publications

(14 citation statements)

References 10 publications

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“…Charge collection efficiency (CCE) should be high enough to achieve superior spectral performance. We irradiated XR-PIX1b and XRPIX3b with an X-ray pencil beam, and found that the CCE becomes lower when X-rays are absorbed near the pixel boundaries [11], [12]. Comparing the experimental data with results from device simulations that we carried out, we came to a conclusion that a part of signal charge is lost due to traps located close to the interface between the sensor and SiO 2 layers [11].…”

Section: A Interference and Charge Collection Efficiency In Xrpixmentioning

confidence: 88%

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Tanaka

Tsuru

Uchida

et al. 2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO2 layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of 100 µm) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of 10 µs. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of ∼ 150 eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of 21.9 mm × 13.8 mm and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the 608 × 384 pixels with high uniformity.

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Section: A Interference and Charge Collection Efficiency In Xrpixmentioning

confidence: 88%

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Tanaka

Tsuru

Uchida

et al. 2018

2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)

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“…sensors have been reported [16,6,7]. Also, the disruption and/or weakening of the electric field near the pixel edges, which enhances the charge cloud diffusion, has been discussed [5].…”

Section: Hit Position Energy Depositmentioning

confidence: 99%

“…The detector response of the XRPIX sensors has been investigated in several works. Matsumura et al (2015) [5] and Negishi et al (2019) [6] studied the spatial distribution of the charge collection efficiency (CCE) and an electric field structure in the sensors in order to evaluate the XRPIX sensor performance. Hagino et al (2019) [7] modeled the charge cloud size and verified it by comparing it to measured number fractions of chargesharing events.…”

Section: Introductionmentioning

confidence: 99%

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

Suzuki,

Tamba,

Odaka

et al. 2020

Preprint

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FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1-80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30-36 µm) and a thick sensitive region (300-500 µm), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors.

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“…Here the "effective" thickness is the one measured with X-ray detection and is often different from the one defined in terms of semiconductor processes. So far, we have achieved a performance of detection of 2.1 keV Xrays and an effective thickness of 0.9-1 µm in the Frame readout mode [7,8]. However, the required threshold of 1 keV has not been reached yet.…”

Section: Introductionmentioning

confidence: 99%

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

Kodama,

Tsuru,

Tanaka

et al. 2020

Preprint

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We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ∼ 18 e − (rms) and ∼ 13 e − (rms), respectively.

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X-ray response evaluation in subpixel level for X-ray SOI pixel detectors

Cited by 9 publications

References 10 publications

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

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