X-Ray Scattering Studies of the Surface Structure of Complex Oxide Films during Layer-by-Layer Growth via Pulsed Laser Deposition

Brock, J. D.; Ferguson, J. D.; Woll, Arthur R.

doi:10.1007/s11661-009-9910-5

Cited by 10 publications

(5 citation statements)

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“…Figure 5 shows the scattering geometry, including the scattered intensities collected by an area detector and a slice of the background-subtracted data along the in-plane momentum transfer (q || ) direction (inset). The scattered intensity can be divided into two components: specular (at q || = 0) and diffuse (at q || ≠ 0) (43)(44)(45). The diffuse intensity originates from the presence of islands on the surface, with a profile that depends on the island distribution.…”

Section: Resultsmentioning

confidence: 99%

How heteroepitaxy occurs on strontium titanate

et al. 2019

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In traditional models of heteroepitaxy, the substrate serves mainly as a crystalline template for the thin-film lattice, dictating the initial roughness of the film and the degree of coherent strain. Here, performing in situ surface x-ray diffraction during the heteroepitaxial growth of LaTiO3 on SrTiO3 (001), we find that a TiO2 adlayer composed of the (13×13)R33.7° and (2×2)R45.0° reconstructions is a highly active participant in the growth process, continually diffusing to the surface throughout deposition. The effects of the TiO2 adlayer on layer-by-layer growth are investigated using different deposition sequences and anomalous x-ray scattering, both of which permit detailed insight into the dynamic layer rearrangements that take place. Our work challenges commonly held assumptions regarding growth on TiO2-terminated SrTiO3 (001) and demonstrates the critical role of excess TiO2 surface stoichiometry on the initial stages of heteroepitaxial growth on this important perovskite oxide substrate material.

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Section: Resultsmentioning

confidence: 99%

How heteroepitaxy occurs on strontium titanate

et al. 2019

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“…Performing the experiments directly under high vacuum conditions ensures that effects such as degradation of the structure or incorporation of impurities due to the exposure to ambient conditions are excluded. Furthermore, transient effects can only be identified if the growth is followed directly in real time (Banerjee et al, 2013;Bommel et al, 2014;Kowarik et al, 2006;Heinemeyer et al, 2010;Krause et al, 2004;Liscio et al, 2013;Kowarik et al, 2008;Brock et al, 2010). Films with three different mixing ratios were prepared.…”

Section: Introductionmentioning

confidence: 99%

Growth and annealing kinetics of α-sexithiophene and fullerene C₆₀mixed films

et al. 2016

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Thin films of -sexithiophene (6T) and C 60 mixtures deposited on nSiO substrates at 303 and 373 K were investigated in real time and in situ during the film growth using X-ray diffraction. The mixtures are observed to contain the well known 6T low-temperature crystal phase and the phase, which usually coexist in pure 6T films. The addition of C 60 modifies the structure to almost purely -phase-dominated films if the substrate is at 303 K. In contrast, at 373 K the low-temperature crystal phase of 6T dominates the film growth of the mixtures. Post-growth annealing experiments up to 373 K on equimolar mixtures and pure 6T films were also performed and followed in real time with X-ray diffraction. Annealing of pure 6T films results in a strong increase of film ordering, whereas annealing of equimolar 6T:C 60 mixed films does not induce any significant changes in the film structure. These results lend further support to theories about the important influence of C 60 on the growth behaviour and structure formation process of 6T in mixtures of the two materials.research papers

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“…[ 234 ] In situ growth studies of metals and semiconductors using CTR scattering have a long history since the first measurements of Ge homoepitaxy via MBE by Vlieg et al [ 235 ] Homo‐ and heteroepitaxial MBE growth, [ 236–240 ] as well as metal‐organic vapor phase epitaxy (MOVPE) growth, [ 241–244 ] have been observed, leading to important basic insights into layer formation and morphology. Growth facilities built at synchrotron beamlines have enabled similar studies of complex oxide growth by MOVPE, [ 245,246 ] PLD, [ 247–250 ] and more recently, MBE, [ 232,251–253 ] revealing, for example, the tendency for certain layered structures to re‐arrange during growth [ 233,254 ] and the conditions under which oxygen defect structures are stabilized [ 100,255 ] (see Figure ). In addition to growth, in situ CTR measurements in heterogeneous environments have been carried out on crystalline‐gas [ 256 ] and crystalline‐liquid interfaces, [ 257–272 ] often relevant for geological and mineralogical studies.…”

Section: Resultsmentioning

confidence: 99%

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

Disa

Walker

Ahn

2020

Adv Materials Inter

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In crystalline materials, the presence of surfaces or interfaces gives rise to crystal truncation rods (CTRs) in their X‐ray diffraction patterns. While structural properties related to the bulk of a crystal are contained in the intensity and position of Bragg peaks in X‐ray diffraction, CTRs carry detailed information about the atomic structure at the interface. Developments in synchrotron X‐ray sources, instrumentation, and analysis procedures have made CTR measurements into extremely powerful tools to study atomic reconstructions and relaxations occurring in a wide variety of interfacial systems, with relevance to chemical and electronic functionalities. In this review, an overview of the use of CTRs in the study of atomic structure at interfaces is provided. The basic theory, measurement, and analysis of CTRs are covered and applications from the literature are highlighted. Illustrative examples include studies of complex oxide thin films and multilayers.

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X-Ray Scattering Studies of the Surface Structure of Complex Oxide Films during Layer-by-Layer Growth via Pulsed Laser Deposition

Cited by 10 publications

References 5 publications

How heteroepitaxy occurs on strontium titanate

How heteroepitaxy occurs on strontium titanate

Growth and annealing kinetics of α-sexithiophene and fullerene C₆₀mixed films

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

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X-Ray Scattering Studies of the Surface Structure of Complex Oxide Films during Layer-by-Layer Growth via Pulsed Laser Deposition

Cited by 10 publications

References 5 publications

How heteroepitaxy occurs on strontium titanate

How heteroepitaxy occurs on strontium titanate

Growth and annealing kinetics of α-sexithiophene and fullerene C60mixed films

High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces

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Growth and annealing kinetics of α-sexithiophene and fullerene C₆₀mixed films