X-ray standing wave analysis of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Sn</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mo>√</mml:mo><mml:mn>3</mml:mn><mml:mo>×</mml:mo><mml:mo>√</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:math>surface

Escuadro, A. A.; Goodner, D. M.; Okasinski, John; Bedzyk, Michael J.

doi:10.1103/physrevb.70.235416

Cited by 21 publications

(17 citation statements)

References 29 publications

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“…31 Furthermore, the direct space x-ray standing wave imaging technique clearly revealed that a significant fraction of the Sn atoms substituted for the Si atoms in the bottom of the Si surface bilayer during annealing. 32 So, it is thus reasonable to assume that the increase and opposite shift of band gaps of the wetting layers upon annealing should be related to the electron transfer ͑Sn-Si intermixing͒ in the wetting layer ͑at the interface͒. This assumption is consistent with the discussion in the second section that the charge spilling change after annealing might destabilize and break down the uniform films formed at low temperature.…”

Section: Change In Electronic Property Induced By Annealingsupporting

confidence: 63%

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
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Surface morphologies and electronic structures of Sn thin films prepared on Si͑111͒-Sn͑2 ͱ 3 ϫ 2 ͱ 3͒ R30°s ubstrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy ͑STS͒. A typical Stranski-Krastanov growth is observed at various growth temperatures ͑95-300 K͒, and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from ␣-Sn to ␤-Sn occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for n-and p-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.

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Section: Change In Electronic Property Induced By Annealingsupporting

confidence: 63%

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
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“…As demonstrated recently, a summation of these XSW measured Fourier components generates an element-specific real-space 3D atomic map. 12,[14][15][16][17][18] …”

Section: Experimental Methodsmentioning

confidence: 99%

Atomic-Scale View of Redox-Induced Reversible Changes to a Metal-Oxide Catalytic Surface: VO_x/α-Fe₂O₃(0001)

et al. 2007

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X-ray standing wave (XSW) analysis and X-ray photoelectron spectroscopy are used to trace the electronic and atomic-scale structural changes of a supported vanadium oxide system at different stages of its oxidationreduction cycle. Both the oxidation state and adsorption geometry of the vanadium oxide and its R-Fe 2 O 3 -(0001) single crystal support show reversible changes through the oxidation-reduction cycle characteristic of catalytic behavior. The 3D V atomic distribution maps, derived from the summation of the XSW measured Fourier components, reveal that the V undergoes adsorption site exchange during the oxidation and reduction cycle.

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“…Therefore these data require further interpretation. For this purpose, we applied the model-independent XSW imaging method [8][9][10][11][12] where the 3D atom distribution is generated from the summation of the XSW measured Fourier components.…”

Section: Electronic Structure and Bonding Propertiesmentioning

confidence: 99%

Adsorption of V on a hematite (0 0 0 1) surface and its oxidation: Monolayer coverage

Jin

Kim

et al. 2007

Surface Science

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The adsorption of a monolayer of V on idealized Fe-and oxygen-terminated hematite (0 0 0 1) surfaces and subsequent oxidation under atomic O adsorption are studied by density functional theory. Theoretical results are compared with X-ray surface standing wave and X-ray photoelectron spectroscopic measurements, and interpreted in the light of data on sub-monolayer coverages. Near-surface Fe reduction under V adsorption and accompanying structural relaxation are examined. These effects and subsequent response to oxidation, are found to be highly site specific. A full monolayer of oxygen leads to a V 5+ state and reoxidation of subsurface Fe to the trivalent state, seen in both theory and experiment.

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X-ray standing wave analysis of theSn∕Si(111)−√3×√3surface

Cited by 21 publications

References 29 publications

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite

Atomic-Scale View of Redox-Induced Reversible Changes to a Metal-Oxide Catalytic Surface: VO_x/α-Fe₂O₃(0001)

Adsorption of V on a hematite (0 0 0 1) surface and its oxidation: Monolayer coverage

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X-ray standing wave analysis of theSn∕Si(111)−√3×√3surface

Cited by 21 publications

References 29 publications

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)RWang1, C.2, Ji3 et al. 2008Phys. Rev. B25280View full textAdd to dashboardCite

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)RWang1, C.2, Ji3 et al. 2008Phys. Rev. B25280View full textAdd to dashboardCite

Atomic-Scale View of Redox-Induced Reversible Changes to a Metal-Oxide Catalytic Surface: VOx/α-Fe2O3(0001)

Adsorption of V on a hematite (0 0 0 1) surface and its oxidation: Monolayer coverage

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Product

Resources

About

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite

Atomic-Scale View of Redox-Induced Reversible Changes to a Metal-Oxide Catalytic Surface: VO_x/α-Fe₂O₃(0001)