X-ray study of strains and dislocation density in epitaxial Cu/Ni/Cu/Si(001) films

Ha, K. F.; Ciria, M.; O’Handley, R.C.; Stephens, Peter W.; Pagola, Silvina

doi:10.1103/physrevb.60.13780

Cited by 46 publications

(45 citation statements)

References 16 publications

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“…Figure 4 gives a comparison between these in-plane strain components and those obtained for a series of unpatterned films measured in the same diffractometer by grazing incidence XRD, as well as data reported elsewhere. 13 The ⑀ xx of the 10NW sample is close to the value found for the unpatterned films while ⑀ yy is about half as large, indicating that the nanowires undergo a relaxation transverse to the NW axis. Considering the z direction, ⑀ zz is smaller than the value ⑀ zz Ϸ −12.8ϫ 10 −3 calculated for the biaxially stressed unpatterned film ͑⑀ zz =−2͑c 12 / c 11 ͒⑀ xx , where the c's are the nickel elastic constants and ⑀ xx Ϸ −10ϫ 10 −3 ͒, 13 showing that ⑀ zz is also relaxed in the NW array.…”

Section: Resultssupporting

confidence: 59%

“…13 The single-crystal nature of each layer and the epitaxial relationships, i.e., Si͗100͘ ʈCu͗110͘ʈ Ni͗110͘, are observed in situ by reflection high-energy electron diffraction ͑RHEED͒, see Figs. 1͑a͒ and 1͑b͒, and highresolution grazing incidence x-ray diffraction ͑XRD͒, done in the BM25B beamline of ESRF using a photon energy of h = 15 keV.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

et al. 2009

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The patterning-induced changes in the magnetic anisotropy and hysteresis of epitaxial ͑100͒-oriented Cu/ Ni͑9, 10, 15 nm͒/Cu planar nanowires have been quantified. When the Ni films are patterned into lines, strain relaxation leads to a thickness-dependent net in-plane anisotropy transverse to the lines. The magnetoelastic anisotropy was found from the three-dimensional strain state measured directly by synchrotron x-ray diffraction and has a value of −21 kJ/ m 3 for 10-nm-thick nanowires. The angular dependence of the remanence of the nanowires indicates that the in-plane easy direction is the result of the competition between the cubic magnetocrystalline anisotropy and a uniaxial anisotropy that includes shape and magnetoelastic effects. The patterning-induced changes in magnetoelastic anisotropy, combined with the shape and magnetocrystalline anisotropies, quantitatively explain the net anisotropy of the nanowires. Thus by controlling the film thickness and wire orientation, the easy axis direction of the nanowires may be controlled.

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Section: Resultssupporting

confidence: 59%

Section: Experimental Methodsmentioning

confidence: 99%

Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

et al. 2009

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“…7 An out-ofplane magnetic easy axis is obtained if the Ni thickness is between 20-and 120 Å. [8][9][10] A Si͑001͒ wafer was degreased, etched in dilute HF for 12 min, rinsed in de-ionized water, and dried with nitrogen gas.…”

Section: Methodsmentioning

confidence: 99%

Out-of-plane exchange coupling between epitaxial Ni (50 Å) and NiO (600 Å) bilayers

Liu

Adenwalla

2003

Journal of Applied Physics

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We have investigated the exchange coupling between an epitaxial Ni ͑50 Å͒ film with an out-of-plane magnetic easy axis and a NiO ͑600 Å͒ film by polar magneto-optic Kerr-effect measurements. The temperature dependences of exchange field H E for both as-deposited and field-cooled states exhibit the same blocking temperature T B ϳ130°C. The exchange field H E for the field-cooled state is lower than that for the as-deposited state. The hard-axis in-plane loop shows a much smaller value of H E . No coercivity enhancement is observed. The data are suggestive of linear coupling across the ferromagnet/antiferromagnet interface.

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“…Rietveld fit to 11-BM (APS) X-ray profile containing an estimated TiO2 (46 wt %) and the new phase related to V2GaO5 (54 wt %). Note the much larger anisotropic strain, defined in GSAS-II [34] and originally introduced [35] and used by Stephens [36,37]. Note the sharper rutile peaks (vertical red markers) compared to those of the V2GaO5-related phase (vertical black markers).…”

Section: Crystallographic Characterizationmentioning

confidence: 99%

Theoretical and Experimental Investigations into Novel Oxynitride Discovery in the GaN-TiO2 System at High Pressure

et al. 2018

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Abstract:We employed ab initio evolutionary algorithm USPEX to speed up the discovery of a novel oxynitride in the binary system of GaN-TiO 2 using high-pressure synthesis. A 1:2 mixture of GaN and nanocrystalline TiO 2 (anatase) was reacted under 1 GPa of pressure and at 1200 • C in a piston cylinder apparatus to produce a mixture of TiO 2 (rutile) and an unknown phase. From the initial analysis of high resolution neutron and X-ray diffraction data, it is isomorphic with monoclinic V 2 GaO 5 with a unit cell composition of Ga 10 Ti 8 O 28 N 2 with the following parameters: monoclinic, space group C2/m, a = 17.823(1) Å, b = 2.9970(1) Å, c = 9.4205(5) Å, β = 98.446(3) • ; Volume = 497.74(3) Å 3 . Further, a joint rietveld refinement revealed two distinct regimes-A Ti-rich block and a Ga-rich block. The Ti-rich block consists of four edge-shared octahedra and contains a site which is about 60% occupied by N; this site is bonded to four Ti. The remainder of the block consists of edge linked Ti-octahedral chains linked to the TiN/TiO fragments at octahedral corners partially occupied by nitrogen. The Ga-block contains two symmetry independent octahedral sites, occupied mostly by Ga, and a pure Ga-centered tetrahedral site bonded mostly to oxygen.

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X-ray study of strains and dislocation density in epitaxial Cu/Ni/Cu/Si(001) films

Cited by 46 publications

References 16 publications

Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

Origin of transverse magnetization in epitaxial Cu/Ni/Cu nanowire arrays

Out-of-plane exchange coupling between epitaxial Ni (50 Å) and NiO (600 Å) bilayers

Theoretical and Experimental Investigations into Novel Oxynitride Discovery in the GaN-TiO2 System at High Pressure

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