X-ray topographic study on dislocation configuration around indentation in a plastic region of Si single crystal

Abstract

This paper describes the dislocation configuration around an indentation on the ( 111) surface of a Si single crystal. X-ray Lang topography was used. The Burgers vector was identified for each section of the dislocation clustering region based on the change of the contrast of the diffraction pattern with various diffraction vectors. Additionally, the mechanism of dislocation interaction was discussed resulting in the observed configuration. The following results were obtained. The dislocation clustering region was divided into the inner and the outer territories, each of which was further divided into several sections with different Burgers vectors. It was assured that dislocations in the outer territory were perfect, while they split into partial dislocations in the inner territory. Therefore dislocation interactions were possible in the inner territory resulting in stair-rod dislocations. The observed configuration could be explained by the mechanism of the dislocation interaction.

Interaction of a dislocation with a crack tip: From stimulated emission to avalanche generation

“…This observation strengthens the idea that all the possible slip systems are probably available within the plastic zone built below the indentation [22], but they do not expand due to the short range of the self-stress field of the indentation, except those which are selected by the crack stress field. The influence of the external stress field is also underlined by the observation of cross-slip and multiplication at the indentation [21].…”