1996
DOI: 10.1063/1.361507
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X-ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growth

Abstract: Articles you may be interested inEvolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200-600°C) and Si(001) substrate miscut A new apparatus for surface xray absorption and diffraction studies using synchrotron radiation Rev.Surface roughness was determined by x-ray diffraction for Ge films on Ge͑001͒ grown by molecular beam epitaxy at room temperature. The truncation rod intensities and transverse-scan line profiles were measured as a function of perpendicular mome… Show more

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Cited by 4 publications
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