Xenon diffusion behaviour in pyrolytic SiC

Fukuda, Kousaku; Iwamoto, Kazumi

doi:10.1007/bf00540933

Cited by 16 publications

(7 citation statements)

References 23 publications

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“…It is anticipated that equivalent amounts for Xe and Kr could be entrained within CVD or PVD SiC. Since Xe and Kr diffusivities are extremely low at ambient temperatures, the release rates of Xe and Kr are negligible, even along grain boundaries, for millions of years (Sauvage et al 2007;Van Ginhoven et al 2006;Pramono, Sasaki and Yano 2004;Chen, Jung and Trinkaus 2000;Jung 1992;Fukuda and Iwamoto 1978;Fukuda and Iwamoto 1976).…”

Section: Summary Report For the Development Of Materials For Volatilementioning

confidence: 99%

“…While there are many polymorphs of SiC, the cubic 3C structure is preferred for nuclear and structural applications, such as ceramic composite fibers and matrices and fine-grained coatings for TRISO nuclear fuel particles. Much of our knowledge of diffusivities of nuclear isotopes in SiC comes from studies of TRISO fuel particles (Peterson and Dunzik-Gougar 2006;Schenk, Naoumidis and Nickel 1984;Smith 1979;Fukuda and Iwamoto 1978;Fukuda and Iwamoto 1976;Fukuda and Iwamoto 1975). Studies have shown that Xe and Kr have extremely low mobilities in SiC at low temperatures and only become mobile above 1200˚C (Fukuda and Iwamoto 1978;Fukuda and Iwamoto 1976;Fukuda and Iwamoto 1975).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Summary Report for the Development of Materials for Volatile Radionuclides

Strachan¹,

Chun²,

Henager³

et al. 2010

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SUMMARYThe materials development summarized here is in support of the Waste Forms campaign, Volatile Radionuclide task. Specifically, materials are being developed for the removal and immobilization of iodine and krypton, specifically 129 I and 85 Kr.During FY 2010, aerogel materials were investigated for removal and immobilization of 129 I. Two aerogel formulations were investigated, one based on silica aerogels and the second on chalcogen-based aerogels (i.e., chalcogels). For 85 Kr, metal organic framework (MOF) structures were investigated.

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Section: Summary Report For the Development Of Materials For Volatilementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Summary Report for the Development of Materials for Volatile Radionuclides

Strachan¹,

Chun²,

Henager³

et al. 2010

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“…5) In the nuclear application fields, irradiation behaviors of SiC must be an important subject to study. Ion implantation and subsequent removal of the radiation damages are also important for technological steps in the device-processing field.…”

Section: Introductionmentioning

confidence: 99%

Crystal Nucleation Behavior Caused by Annealing of SiC Irradiated with Ne at Liquid Nitrogen Temperature or at 573 K

et al. 2007

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Silicon carbide(SiC) TEM specimens were annealed, in-situ, at 1273 K for 30 minutes after amorphization with 30 keV Ne þ irradiation to the fluence of 1.9 or 2:3 Â 10 20 Ne þ /m 2 at 573 K or liquid nitrogen temperature. The crystal nucleation and bubble coalescence accompanied by recrystallization were observed for both specimens subjected to the annealing after the irradiation to the fluence of 2:3 Â 10 20 Ne þ /m 2 in both irradiation temperature cases. The Debye-Sherrer rings of the nucleated crystals well fitted the net pattern of the matrix, even though no ring corresponding to (200) of -SiC appeared. No effect of the irradiation temperature occurred within the present experimental range. It appears that the concentration of implanted inert gas atoms played more important roll than the amorphous structure itself in the crystal nucleation behavior under the condition that the inert gas bubbles were formed in amorphous SiC.

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“…The present authors examined helium release behavior and change in physical properties of neutron-irradiated SiC ceramics containing B 4 C, 8) and their microstructures by a transmission electron microscope (TEM) after annealing at several temperatures. 9) The impurity, self-diffusion and other gas diffusion, such as Xe and tritium, in SiC material has been reported, 5,[10][11][12][13] as well as helium diffusion in metal, 14) SiC, 15) graphite, 16) Si, Ge, diamond, 17) B 4 C, [18][19][20] SiC f /SiC composites, 21) basaltic glass, 22) and britholite. 23) Data of helium diffusion coefficient in neutron-irradiated SiC are still not sufficient.…”

Section: Introductionmentioning

confidence: 99%

Release and Diffusion Rate of Helium in Neutron-Irradiated SiC

Pramono

Sasaki

Yano

2004

Journal of Nuclear Science and Technology

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Helium release measurements and diffusion coefficient calculations of helium in a neutron-irradiated -SiC have been carried out in the temperature range of 750-1,260 C. The powder was obtained from SiC ceramics containing B 4 C, of which 10 B concentration was 4:2Â10 16 atom/mg. Neutron irradiation was conducted up to a fluence of 2:8Â10 24 n/m 2 (E>0:1 MeV) at $300 C. The diffusion coefficients were calculated for the temperature region of 750-1,060 C with time range of 0-10 min. The diffusion coefficient of helium for SiC containing B 4 C was D ðcm 2 /sÞ¼1:38Â10 À10 exp½À0:91AE0:07 ðeV/atomÞ=kT. Dissociative and interstitial diffusion mechanisms were supposed. Diffusion coefficients were reduced above $1,160 C probably due to accelerated migration of vacancies.

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Xenon diffusion behaviour in pyrolytic SiC

Cited by 16 publications

References 23 publications

Summary Report for the Development of Materials for Volatile Radionuclides

Summary Report for the Development of Materials for Volatile Radionuclides

Crystal Nucleation Behavior Caused by Annealing of SiC Irradiated with Ne at Liquid Nitrogen Temperature or at 573 K

Release and Diffusion Rate of Helium in Neutron-Irradiated SiC

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