Xerographic time of flight experiment for the determination of drift mobility in high resistivity semiconductors

Impact of non-symmetric 2,9,10-aryl substitution on charge transport and optical properties of anthracene derivatives

“…concentrations of compounds were 0.002 M. The scan rate was 50 mV s -1 . Carrier drift mobility of wet-casted neat films was measured by xerographic time of flight (XTOF) method [39][40][41].…”

Hydrazones containing electron-accepting and electron-donating moieties

“…Charge carrier mobility (m h ) was measured by time-of-flight method [17,18]. The samples for the measurements were prepared by the earlier reported procedure [19].…”

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

“…In an attempt to find most efficient corona discharge device for xerographic spectroscopic purposes, it seems necessary, as Vaezi-Nejad did [33], examine various device configurations utilizing sharp pin/pins and wire/wires as the corona emitter. The schematic sketches of different corona devices are shown in Fig.…”

“…Band-gap light can, in principle, have two distinct effects on the electronic structure of the mobility gap. Band-gap light can either introduce (generate) new localized states or initiate conversion of traps of small cross section to traps of larger cross section [33,34]. Consequently, the latter become accessible in deep level spectroscopy Fig.…”