The results described in this paper first demonstrate key differences between a plasma-exposed blanket porous dielectric sample and a patterned structure in terms of surface sealing induced by the patterning plasma using ellipsometric porosimetry characterization. While the blanket CVD organosilicate glass (nominal k-value = 2.4, ∼20% of porosity) surface was sealed by the C 4 F 8 /CF 4 -based plasma, the surface of the analogous patterned structure of 45 nm 1/2 pitch was found to be completely open after the same patterning plasma process. Second, the surface composition of the patterned feature, type of the residues generated during the plasma etch, and the effect of a subsequent wet clean step are presented. The experimental results demonstrate that the use of a relevant patterned test structure and its characterization represent an appropriate approach for the optimization of the etch and cleaning processes. The removal efficiency of various wet clean solutions, including dilute HF, citric acid, tetramethylammonium hydroxide:H 2 O 2 :H 2 O mixture, and a slightly alkaline formulated mixture, with regard to polymer residues, CFx, and metal-containing residues, TiFx, can be clearly distinguished using the patterned porous low-k stack. In back-end of line (BEOL) processing of advanced microelectronic CMOS integrated circuits, conductor lines are made using a damascene approach. For this, dielectric layers are locally etched through a patterned photoresist or metal hardmask layer using plasmas and followed by electroplating of Cu inside the etched patterns. In order to ensure accurate profile control, etching anisotropy, and minimize degradation of the exposed porous dielectric during the plasma etch, polymerizing plasma chemistries are employed to deposit a thin layer of polymer on the exposed surface.1-3 A good balance between the polymerization and the dielectric etch rate allows the polymer film to passivate the sidewalls without affecting the vertical etch rate, resulting in a vertical etch profile. The polymer formed during the dry etch process ("post-etch polymer residues" or PER), mostly fluorocarbon polymers for fluorocarbon-containing plasmas, must be removed prior to deposition of subsequent layers (metal) in the etched features to achieve high adhesion and good coverage. Removal of these polymers is usually performed by a combination of a short plasma treatment and wet clean using chemical solutions, or by wet cleans alone. It is known that this type of fluorocarbon polymer is chemically inert to many existing wet clean solutions, including aqueous solutions such as fluoride ion-containing or highly alkaline solutions, and solvent mixtures.4 A short plasma treatment carried out prior to the wet clean step enhances the polymer removal efficiency but also has a drawback of irreversibly damaging the porous dielectrics by material densification, carbon depletion, and increase of hydrophilicity. 1,2,5,6 An alternative approach for improving the residue removal efficiency involves structural modification o...