XPS Diffusion analysis of Ta(N)/Ru Diffusion Barriers for Cobalt Interconnects

Wehring, Bettina; Gerlich, Lukas; Uhlig, Benjamin

doi:10.1109/iitc51362.2021.9537391

Cited by 2 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ru is currently a promising conductor material and the most attractive barrier material. [ 171 , 172 ] Ru has a high melting temperature with outstanding adhesion to Cu metal owing to its excellent wettability but insignificant solubility with Cu. From a thermodynamic perspective, Ru has an excellent affinity with Cu, enabling underpotential plating, which can obtain a Cu layer with high continuity in the initial deposition phase.…”

Section: Next‐generation Interconnect Materialsmentioning

confidence: 99%

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

View full text Add to dashboard Cite

Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

show abstract

Section: Next‐generation Interconnect Materialsmentioning

confidence: 99%

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

View full text Add to dashboard Cite

show abstract

“…However, tantalum nitride has recently attracted great interest as a protective coating due to its excellent properties such as good wear and corrosion resistance, super hardness, high strength and toughness (even at high temperatures), high thermal stability, and great thermal conductivity [4,[11][12][13]. These properties position this material as a great candidate for different applications such as diffusion barriers, an application in which it has achieved a great reputation [14,15], silicon-based integrated circuits, high-performance microprocessors and in a wide variety of biomedical applications, showing that these coatings have better histocompatibility and hemocompatibility than traditionally used biomedical alloys [16,17]. Additionally, the superconductor TaN has been shown to be a much better candidate than niobium nitride (NbN) for the detection of single photons [15] due to its smaller space and lower density of states.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

et al. 2022

View full text Add to dashboard Cite

In this work, thin films of TaN were synthesized on 304 steel substrates using the reactive DC sputtering technique from a tantalum target in a nitrogen/argon atmosphere. All synthesis parameters such as gas ratio, pressure, gas flow, and substrate distance, among others, were fixed except the applied power of the source for different deposited coatings. The effect of the target power on the formation of the resulting phases and the microstructural and morphological characteristics was studied using XRD and AFM techniques, respectively, in order to understand the growth mechanisms. Phase, line profile, texture, and residual stress analysis were carried out from the X-ray diffraction patterns obtained. Atomic force microscopy analysis allowed us to obtain values for surface grain size and roughness which were related to growth mechanisms in accordance with XRD results. Results obtained showed a strong correlation between the growth energy with the crystallinity of the samples and the formation of the possible phases since the increase in the growth power caused the samples to evolve from an amorphous structure to a cubic monocrystalline structure. For all produced samples, the δ-TaN phase was observed despite the low N2 content used in the process (since for low N2 content it was expected to be possible to obtain films with α-Ta or hexagonal ε-TaN crystalline structure). In order to determine the corrosion resistance of the coatings, electrochemical impedance spectroscopy and polarization resistance were employed in the Tafel region. The results obtained through this evaluation showed a direct relationship between the power used and the improvement of the properties against corrosion for specific grain size values.

show abstract

XPS Diffusion analysis of Ta(N)/Ru Diffusion Barriers for Cobalt Interconnects

Cited by 2 publications

References 9 publications

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Contact Info

Product

Resources

About