XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

Turishchev, S. Yu.; Chuvenkova, O. A.; Parinova, E. V.; Koyuda, D. A.; Chumakov, Ratibor G.; Presselt, Martin; Schleusener, Alexander; Sivakov, Vladimir

doi:10.1016/j.rinp.2018.09.046

Cited by 27 publications

(14 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 presents the values of binding energy (BE) of the core levels Sn 3d 5/2 , O 1s, Ag 3d 5/2 , Sc 2p 3/2 , and Y 3d 5/2 . According to the literature data [32,33] in tin dioxide the positions of maxima of Sn 3d and O 1s lines lie in the ranges 486.2-487.2 and 530-531 eV, respectively. For the films studied in this paper, the binding energies (Table 1) correspond to these fundamental values.…”

Section: Nanostructure and Composition Of The Filmsmentioning

confidence: 77%

Effect of Additives Ag and Rare‐Earth Elements Y and Sc on the Properties of Hydrogen Sensors Based on Thin SnO2 Films during Long‐Term Testing

et al. 2019

View full text Add to dashboard Cite

The paper presents the results of an investigation of the nanostructure, elements, and phase composition of thin (100–140 nm) tin dioxide films obtained via magnetron sputtering and containing Ag, Y, Sc, Ag + Y, and Ag + Sc additives in the volume. Electrical and gas‐sensitive characteristics of hydrogen sensors based on these films with dispersed Pt/Pd layers deposited on the surface were studied. The additives had a significant effect on the nanostructure of the films, the density of oxygen adsorption sites on the surface of tin dioxide, the band bending at the grain boundaries of tin dioxide, the resistance values in pure air, and the responses to hydrogen in the concentration range of 50–2000 ppm. During the long‐term tests of most of the samples studied, there was an increase in the resistance of the sensors in clean air and in the response to hydrogen. It has been established that the joint introduction of Ag + Y into the volume of films prevents the increase in the resistance and response. For these sensors based on thin films of Pt/Pd/SnO2:Sb, Ag, Y the responses to 100 and 1000 ppm of H2 are 25 and 575, correspondingly, the response time at exposure to 100 and 1000 ppm of H2 are 10 and 90 s, the recovery time at exposure to 100 and 1000 ppm of H2 17 and 125 s. Possible mechanisms of the effect of additives on the properties of sensors and the stability of their parameters during long‐term operation were considered.

show abstract

Section: Nanostructure and Composition Of The Filmsmentioning

confidence: 77%

Effect of Additives Ag and Rare‐Earth Elements Y and Sc on the Properties of Hydrogen Sensors Based on Thin SnO2 Films during Long‐Term Testing

et al. 2019

View full text Add to dashboard Cite

show abstract

“…92–95 The peaks F and G observed at 528.8 eV and 530.15 eV, respectively in the O1s spectrum (Fig. S4c†), indicate the presence of two components with binding energies typically associated with O–Ni 96,97 and O–Sn linkages, 98 respectively. Surface oxygen is more likely bonded to Sn particles (60.26%) with a binding energy of 530.15 eV than to Ni particles (39.74%) with a binding energy of 528.8 eV.…”

Section: Resultsmentioning

confidence: 98%

Unravelling the redox mechanism and kinetics of a highly active and selective Ni-based material for the oxidative dehydrogenation of ethane

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Such values closely match literature values for SnO 2 (486.7–487.0 eV) and np‐SnO 2 (486.9 eV). [ 62 ] We note, however, that the UV–ozone treatment affected the O1 s signal which increased in relative intensity compared to the 3d 5/2 peak and underwent some broadening (see Figure S2, Supporting Information) suggesting increased incorporation of oxygen into the film. We can estimate film stoichiometry by comparing the area of the O1 s and Sn 3d 5/2 peaks.…”

Section: Resultsmentioning

confidence: 99%

Low‐Temperature, Scalable, Reactive Deposition of Tin Oxide for Perovskite Solar Cells

et al. 2022

View full text Add to dashboard Cite

Tin oxide (SnO x ) electron‐extraction layers are fabricated via a reactive electron‐beam evaporation process from a metal source under a partial pressure of oxygen. These are then used in standard (n‐i‐p) architecture perovskite solar cells and achieve power conversion efficiencies up to 19.3%. The SnO x deposition process is performed onto substrates maintained at low temperature compared to similar techniques, with films not requiring any subsequent high‐temperature post‐deposition annealing. This demonstrates the potential compatibility of reactive electron‐beam evaporation with roll‐to‐roll processing onto flexible polymeric substrates.

show abstract

XPS investigations of MOCVD tin oxide thin layers on Si nanowires array

Cited by 27 publications

References 17 publications

Effect of Additives Ag and Rare‐Earth Elements Y and Sc on the Properties of Hydrogen Sensors Based on Thin SnO2 Films during Long‐Term Testing

Effect of Additives Ag and Rare‐Earth Elements Y and Sc on the Properties of Hydrogen Sensors Based on Thin SnO2 Films during Long‐Term Testing

Unravelling the redox mechanism and kinetics of a highly active and selective Ni-based material for the oxidative dehydrogenation of ethane

Low‐Temperature, Scalable, Reactive Deposition of Tin Oxide for Perovskite Solar Cells

Contact Info

Product

Resources

About