2019
DOI: 10.1088/1757-899x/490/2/022079
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XPS studies of charging effect induced by X-ray irradiation on amorphous SiO2 thin films

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Cited by 14 publications
(3 citation statements)
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“…It can be seen that for Si 2p and O 1s spectra, only one symmetric peak can be fitted, which is located at the binding energies of 103.5 and 532.83 eV, respectively. These two binding energies correspond to Si 4+ and O 2− in SiO 2 , 23,24 indicating that the film is completely oxidized to stoichiometric SiO 2 . Figure 1d,e shows microstructures of the SiO 2 film deposited on silicon wafers characterized by SEM and AFM.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…It can be seen that for Si 2p and O 1s spectra, only one symmetric peak can be fitted, which is located at the binding energies of 103.5 and 532.83 eV, respectively. These two binding energies correspond to Si 4+ and O 2− in SiO 2 , 23,24 indicating that the film is completely oxidized to stoichiometric SiO 2 . Figure 1d,e shows microstructures of the SiO 2 film deposited on silicon wafers characterized by SEM and AFM.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Figure shows the F 1s, O 1s, and C 1s XPS spectra of cycled cast-PEO and cycled dry-PEO. It is worth noting that the binding energies between cycled cast-PEO and cycled dry-PEO exhibit shifts up to 1.8 eV for specific species, which could be attributed to differing charging effects due to the differing electronically insulating properties of PEO and the formed SEI species. …”
Section: Results and Discussionmentioning
confidence: 99%
“…The in-plane area of defects has been estimated using the software for image analysis Gwydion [30] in the three cases. The in-plane defects of the a-SiH NoIr have an area density of about 2%, after irradiation, the area of defects results increased to about 12%, while after annealing it is reduced to 6%.…”
Section: Effect Of Irradiation On the Sio 2 Coatingmentioning
confidence: 99%