XPS study of a SiC film produced on Si(100) by reaction with a C2H2 beam

Kusunoki, Isao; Igari, Y.

doi:10.1016/0169-4332(92)90293-7

Cited by 120 publications

(50 citation statements)

References 18 publications

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“…by a component at 101.8Ϯ0.2 eV, consistent with the peak position 6 for SiC, with a lesser component at 99.5Ϯ0.2 eV and corresponding to elemental silicon. The presence of SiC at this stage is also confirmed by a C 1s component ͓Fig.…”

Section: B Xps Depth Profilingsupporting

confidence: 57%

Adherent carbon film deposition by cathodic arc with implantation

Gerstner

McKenzie

Puchert

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inA method of improving the adhesion of carbon thin films deposited using a cathodic vacuum arc by the use of implantation at energies up to 20 keV is described. A detailed analysis of carbon films deposited onto silicon in this way is carried out using complementary techniques of transmission electron microscopy and x-ray photoelectron spectroscopy ͑XPS͒ is presented. This analysis shows that an amorphous mixing layer consisting of carbon and silicon is formed between the grown pure carbon film and the crystalline silicon substrate. In the mixing layer, it is shown that some chemical bonding occurs between carbon and silicon. Damage to the underlying crystalline silicon substrate is observed and believed to be caused by interstitial implanted carbon atoms which XPS shows are not bonded to the silicon. The effectiveness of this technique is confirmed by scratch testing and by analysis with scanning electron microscopy which shows failure of the silicon substrate occurs before delamination of the carbon film.

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Section: B Xps Depth Profilingsupporting

confidence: 57%

Adherent carbon film deposition by cathodic arc with implantation

Gerstner

McKenzie

Puchert

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The high BE signal (at ~104 eV) remains assigned to Si in the 4+ state, and its shift may, again, be associated with the work function change. Regarding the low BE signal at ~101 eV, XPS studies available in the literature on Si-based materials allow us to assign this peak to Si cations coordinated to C like in silicon carbide [24][25][26].…”

Section: Resultsmentioning

confidence: 99%

Ultrathin silicatene/silicon-carbide hybrid film on a metal substrate

2015

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Layered graphene/silica heterostructures may become interesting materials in nanotechnology with yet unknown properties. We have attempted here to intercalate graphene into a silicatene/Ru(0001) interface. The experimental results obtained by x-ray photoelectron spectroscopy, low energy electron diffraction, infrared reflection-absorption spectroscopy, and scanning tunneling microscopy suggest the formation of a well-ordered hybrid structure consisting of a single-layer silicatene on top of a silicon carbide monolayer adsorbed on a metal substrate.

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“…Simple hydrocarbons are possible sources for making SiC and for growing thin diamond films. [1][2][3][4] Acetone has been proposed, and studied, as a potential source of methyl radicals ͑produced by photodissociation͒ which may be used to form thin diamond films on silicon. 5 There has also been interest in using carbonyl functional groups to chelate metals; the chelated metals are then either delivered to or removed from a Si or oxide surface, e.g., copper ͑II͒ bis͑acety-lacetonate͒ ͓Cu(acac) 2 ͔ and copper ͑II͒ bis͑1,1,1,5,5,5-hexafluoropentanedionate͒ ͓Cu(u f ac) 2 ͔.…”

Section: Introductionmentioning

confidence: 99%

Thermal decomposition reactions of acetaldehyde and acetone on Si(100)

Armstrong¹,

White²,

Langell³

1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We have studied the thermal interactions of acetone and acetaldehyde on Si͑100͒, both sputtered and annealed, using high resolution electron energy loss spectroscopy, ͑HREELS͒, x-ray photoelectron spectroscopy ͑XPS͒, and temperature programmed desorption ͑TPD͒. There is no carbonyl stretch in HREELS and the C and O(1s) XPS peaks reflect two different carbonyl processes, one involving bond cleavage, the other a reduction of the C-O bond order. Hydrogen TPD gives a peak at 840-850 K which is as much as threefold more intense than from H-saturated Si͑100͒. SiO desorbs near 1050 K and XPS shows total loss of oxygen and retention of carbon. Approximately 34% of the acetaldehyde monolayer and 62% of the acetone monolayer decomposes on annealed Si͑100͒ to produce silicon carbide. In contrast, after sputtering with 500 eV Ar ions, these percentages are reduced to 14% and 25%, respectively. We conclude that Si dimers play an important role in the chemistry of carbonyl groups.

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XPS study of a SiC film produced on Si(100) by reaction with a C2H2 beam

Cited by 120 publications

References 18 publications

Adherent carbon film deposition by cathodic arc with implantation

Adherent carbon film deposition by cathodic arc with implantation

Ultrathin silicatene/silicon-carbide hybrid film on a metal substrate

Thermal decomposition reactions of acetaldehyde and acetone on Si(100)

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