XPS study of ion‐beam‐assisted formation of Si nanostructures in thin SiO₂ layers

Abstract

Thin thermally grown SiO 2 layers have been enriched with Si up to ∼15 at.% by Si ion implantation at room temperature. X-ray photoelectron spectroscopy (XPS) was used to monitor the composition changes caused in the layers by bombardment with 3 keV Ar ions at elevated temperatures. Argon ion irradiation of pure SiO 2 does not lead to the formation of Si nanoprecipitates. That was the case also for room-temperature Ar bombardment of Si-rich layers. Their 'hot' irradiation with Ar ions was found to enhance considerably the formation of segregated Si nanophase inclusions. The process starts at ∼500• C and becomes strongly pronounced at 650• C. At this temperature ion-beam-induced crystallization of Si nanoprecipitates may be achieved. The results obtained are explained in the framework of the physical model, based on the irradiation-enhanced diffusion of excess Si atoms.

Electronic Structure and Optical Quality of Nanocrystalline Y2O3 Film Surfaces and Interfaces on Silicon

“…The silicon atoms agglomerate into nanocrystals leading to the formation of the Y x Si y O z + Si interfacial composite. The agglomeration of silicon atoms in nanocrystals in the oxide host medium is a well-known effect in thin-film formation on Si. − As it appears from our data, this reaction dominates at initial film formation stages. In parallel, the top layer of Y 2 O 3 bulk forms by yttrium target reactive sputtering.…”

Electrodeposition of Si Thin Film in a Hydrophobic Room-Temperature Molten Salt

“…This is probably caused by the refinement of Si in the electrodeposited film and the formation of bonds between Si and the surrounding impurities such as C, N, and O induced by Ar + bombardment. [13][14][15] Actually, the incorporation of Ar into the electrodeposited film is found whenever Ar + etching is engaged, whereas Ar atom is not detected for a crystalline Si plate etched by Ar + under the same conditions. For Si plates fabricated by other processes, including chemical vapor deposition, the effect of Ar bombardment emerges at a much higher accelerating voltage than that in this study.…”

Critical Thickness of SiO2 Coating Layer on Core@Shell Bulk@Nanowire Si Anode Materials for Li‐Ion Batteries

“…7, 10, and 15 nm. 2p Si XPS spectra of the sample with a 7 nm‐thick coating exhibits increased peak intensity at 103 eV, which is indicative of SiO 2 formation 41. On the other hand, the sample with a 2 nm‐thick coating shows a broad peak at 102 eV, which is indicative of formation of SiO x rather than SiO 2 30.…”