XPS study of the chemical bonding in hydrogenated amorphous germanium-carbon alloys

Vilcarromero, J.; Marques, F. C.

doi:10.1007/s003390051083

Cited by 42 publications

(19 citation statements)

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“…Our data seem at least partially consistent with the results obtained by Marques and co-workers: 44,45 in fact, the C1s spectra recorded clearly evidence the formation of carbidelike species ͑peak C1 at 283.3 eV͒, at about the same BE reported by the authors. Moreover, the increase in the C molar fraction influences the C1/C2 ratio, and the relative intensity of peak C2 increases.…”

Section: X-ray Photoelectron Spectroscopysupporting

confidence: 93%

“…44,45 A parallel decrease in the kinetic energy of the L 3 M 45 M 45 Auger peak and in the ␣Ј parameter is evidenced.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 80%

“…Marques and co-workers, for instance, studied the formation of Ge x C 1−x : H alloys prepared by rf sputtering. 44,45 The authors have observed the presence of a single peak in the Ge3d spectra, found at a binding energy included between 29.5 and 31.0 eV, the BE value growing with the carbon content in the sample ͑i.e., decreasing with x͒. An equivalent effect was evidenced in the correspondent C1s spectra, showing the presence of a low BE peak ͑283.4 eV͒ attributed by the authors to carbidelike species and a graphite peak at 284.5 eV.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

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Amorphous nonstoichiometric Ge1−x–Cx:H compounds obtained by radiolysis-chemical vapor deposition of germane/ethyne or germane/allene systems: A bonding and microstructure investigation performed by x-ray photoelectron spectroscopy and Raman spectroscopy

Benzi

Bottizzo

Demaria

et al. 2007

Journal of Applied Physics

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Section: X-ray Photoelectron Spectroscopysupporting

confidence: 93%

“…44,45 A parallel decrease in the kinetic energy of the L 3 M 45 M 45 Auger peak and in the ␣Ј parameter is evidenced.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 80%

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

See 1 more Smart Citation

Amorphous nonstoichiometric Ge1−x–Cx:H compounds obtained by radiolysis-chemical vapor deposition of germane/ethyne or germane/allene systems: A bonding and microstructure investigation performed by x-ray photoelectron spectroscopy and Raman spectroscopy

Benzi

Bottizzo

Demaria

et al. 2007

Journal of Applied Physics

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“…The first peak at 282.7 eV can be assigned to C bonded to Nb (C-Nb) 5 , and the second peak at 284.6 eV corresponds to C bonded to C (C-C) in an amorphous phase 30 . When Ge is added, the amount of C-C bonds is decreased and a contribution from C bonded to Ge (C-Ge) is seen between 283.7-283.9 eV depending on Ge content 16,31 .…”

Section: Resultsmentioning

confidence: 99%

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Tengstrand

Nedfors

Fast³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Nb-Ge-C nanocomposite thin films were deposited by dc magnetron sputtering using three elemental targets. The films consist of substoichiometric NbCx in a nanometer-thick matrix of amorphous C and Ge. Films with no Ge contain grains that are elongated in the growth direction with a (111) preferred crystallographic orientation. With the addition of ∼12 at. % Ge, the grains are more equiaxed and exhibit a more random orientation. At even higher Ge contents, the structure also becomes denser. The porous structure of the low Ge content films result in O uptake from the ambient. With higher C content in the films both the amount of amorphous C and C/Nb-ratio increases. The contact resistance was measured by four-point technique as a function of contact force between 0 and 10 N. The lowest contact resistance (1.7 mΩ) is obtained at 10 N. The resistivity varies between 470 and 1700 μΩ·cm depending on porosity and O content.

At the time for thesis presentation publication was in status: Manuscript

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“…Peaks associated with Ge3d, CIs, Ge2pl, Ge2p3 can be observed. The Ge3d peak is associated with elemental Ge whereas CIs is a carbide peak [16].…”

Section: Methodsmentioning

confidence: 99%

Growth and characterization of germanium carbide films for hot carrier solar cell absorber

Shrestha¹,

Gupta²,

Aliberti³

et al. 2012

2012 38th IEEE Photovoltaic Specialists Conference

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The Hot carrier (HC) solar cell is a promising third generation photovoltaic device with potentially very high efficiency. It aims to tackle the major loss in conventional solar cells by collecting carriers with energies above the band gap ("hot" carriers) before they thermalise. This demands an absorber with a sufficiently slow carrier cooling rate to allow collection of these carriers. In this work, Gee has been investigated as a potential He absorber material. Gee films have been deposited by RF magnetron sputtering at different temperature and using different targets. Preliminary measurements show the formation of Gee, consistent with previous observations.

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XPS study of the chemical bonding in hydrogenated amorphous germanium-carbon alloys

Cited by 42 publications

References 0 publications

Amorphous nonstoichiometric Ge1−x–Cx:H compounds obtained by radiolysis-chemical vapor deposition of germane/ethyne or germane/allene systems: A bonding and microstructure investigation performed by x-ray photoelectron spectroscopy and Raman spectroscopy

Amorphous nonstoichiometric Ge1−x–Cx:H compounds obtained by radiolysis-chemical vapor deposition of germane/ethyne or germane/allene systems: A bonding and microstructure investigation performed by x-ray photoelectron spectroscopy and Raman spectroscopy

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Growth and characterization of germanium carbide films for hot carrier solar cell absorber

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