1992
DOI: 10.1002/sia.740180909
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XPS study of the interface reactions between buffer layers for HTSC thin films and silicon

Abstract: In this work we have studied the interface reactions during e‐beam evaporation of yttria‐stabilized zirconia (YSZ), yttria (Y2O3) and Y on Si(100) substrates by means of x‐ray photoelectron spectroscopy (XPS). A deposition process was developed for the heteroepitaxial growth of YSZ and Y2O3. A high amount of metallic Zr in the YSZ vapour results in an in situ reduction of the native silicon oxide layer, allowing the growth of high‐quality YSZ films even on uncleaned Si substrates. A similar in situ reduction p… Show more

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Cited by 47 publications
(21 citation statements)
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“…The unsupported Ce-Zr mixed oxides with the combination of Ce 0.75 Zr 0.25 O 2 and Ce 0.5 Zr 0.5 O 2 phases having the crystallite size of ∼10 nm exhibited 50% conversion at a temperature of 633 K [23], while the silica stabilized Ce-Zr-oxides of below 5 nm (present study) indicate a temperature of 545 K for the same conversion with slightly better product distribution, which is intriguing. The decrease of temperature corresponding to 50% conversion could be attributed to the reduced crystallite size of the Ce-Zr-oxides, which exhibit increased reactivity due to very small size.…”
Section: Resultsmentioning
confidence: 59%
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“…The unsupported Ce-Zr mixed oxides with the combination of Ce 0.75 Zr 0.25 O 2 and Ce 0.5 Zr 0.5 O 2 phases having the crystallite size of ∼10 nm exhibited 50% conversion at a temperature of 633 K [23], while the silica stabilized Ce-Zr-oxides of below 5 nm (present study) indicate a temperature of 545 K for the same conversion with slightly better product distribution, which is intriguing. The decrease of temperature corresponding to 50% conversion could be attributed to the reduced crystallite size of the Ce-Zr-oxides, which exhibit increased reactivity due to very small size.…”
Section: Resultsmentioning
confidence: 59%
“…This involves three types of mechanisms viz., concerted elimination pathway (E2), formation of carbocation (E1) and carbanion formation via two-point mechanism (E1cB) [22,23]. These mechanisms should be regarded as limiting cases, since intermediate situations can occur.…”
Section: Resultsmentioning
confidence: 99%
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“…occurs together with partial oxidation of Si. The formation of either CeSiO 4 or ZrSiO 4 could be identified by the Si 2p binding energy value of 101 eV and clearly these are absent [88]. The Ti 2p photoelectron spectra of the CZT samples exhibited typical XPS peaks in the range of 458.5-458.8 eV for Ti 2p 3/2 [89,90].…”
Section: Xps Analysismentioning
confidence: 97%
“…occurs together with partial oxidation of Si. The formation CeSiO 4 could be identified by the Si 2p binding energy value of 101 eV and clearly these are absent [93]. As shown in Table 3 and Fig.…”
Section: Xps Measurementsmentioning
confidence: 97%