XPS study of TiOx thin films deposited on glass substrates by the sol–gel process

Xu, Weixing; Zhu, Shengli; Fu, Xiancai

doi:10.1016/s0169-4332(98)00284-0

Cited by 17 publications

(5 citation statements)

References 17 publications

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“…In general, black TiO x film exhibits more catalytic application potential than TiO x powders [ 10 ]. Therefore, all kinds of methods such as electrospinning [ 11 ], the sol–gel process [ 12 ], pulsed laser deposition (PLD) [ 13 ], hydrogen treating [ 14 ], H 2 plasma-assisted deposition [ 6 ], and reactive magnetron sputtering [ 15 ] have been used to fabricate black TiO x films. Among those methods, reactive magnetron sputtering is widely applied to fabricate films for industrial production, employing gas to react with sputtered atoms to obtain compounds.…”

Section: Introductionmentioning

confidence: 99%

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Mao

et al. 2021

Materials

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Titanium oxide is widely applied as a photocatalyst. However, its low efficiency and narrow light absorption range are two main disadvantages that severely impede its practical application. In this work, black TiOx films with different chemical compositions were fabricated by tuning target voltage and controlling O2 flow during reactive DC magnetron sputtering. The optimized TiOx films with mixed phases (TiO, Ti2O3, Ti3O5, and TiO2) exhibited fantastic photothermal and photocatalytic activity by combining high light-absorptive Ti2O3 and Ti3O5 phases with the photocatalytic TiO2 phase. The sample prepared with oxygen flow at 5.6 ± 0.2 sccm and target voltage near 400 V exhibited excellent optical absorbance of 89.29% under visible light, which could improve surface temperature to 114 °C under sunlight. This film could degrade Rhodamine-B up to 74% after 150 min of UV irradiation. In a word, this work provides a guideline for fabricating black TiOx films with photothermal-assisted photocatalytic activity by reactive DC magnetron sputtering, which could avoid the usage of hydrogen and is convenient for quantity preparation.

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Section: Introductionmentioning

confidence: 99%

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Mao

et al. 2021

Materials

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“…Figure 4a depicts the O 1s and Si 2p core-level microstructure of the TiO x obtained according to the XPS results. The O 1s spectrum exhibits three peaks after deconvolution, which correspond to TiO 2 (530.7 eV), oxygen deficient TiO x (531.4 eV) and SiO x (532.5 eV) [13][14][15]. The Si-bonded O signal covers a broad energy range, that overlapps with the oxygen-deficient TiO x signal, indicating the existence of oxygen deficient SiO x and cross-bonding, such as Si-O-Ti.…”

Section: Resultsmentioning

confidence: 99%

Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells

2020

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In this work, we demonstrated a heterojunction Si solar cell utilizing chemically grown titanium oxide (TiOx) as an electron-selective contact layer at its rear surface. With TiOx, the rear surface was passivated to reduce carrier recombination. The reverse saturation current, which is an indicator of carrier recombination, exhibited a 4.4-fold reduction after placing a TiOx layer on the rear surface. With reduced recombination, the open-circuit voltage increased from 433 mV to 600 mV and consequently, the power conversion efficiency (PCE) increased from 9.57 to 14.70%. By x-ray photoemission spectroscopy, the surface passivation was attributed to a silicon oxide interfacial layer formed during the chemical growth process. This passivation results in a 625 cm/s surface recombination velocity for the TiOx-passivated Si surface, which is 2.4 times lower than the sample without TiOx, ensuring the carriers pass through the rear contact without extensive recombination. According to these results, the band alignment for the heterojunction solar cell with and without a TiOx rear contact layer was plotted, the reduced interfacial recombination and the electron and hole blocking structure are the main reasons for the observed efficiency enhancement.

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“…Detailed parameters used in the fitting are summarized in Table 1, consistent with previous research on TiO x fitting parameters. [55][56][57][58][59][60][61][62] Fitting results for TiO x oxygen compositions of 1.38 and 1.64 are presented in Figure 3b,c, indicating a significant increase in metallic Ti 0+ at an oxygen composition of 1.38 compared to 1.64. It means that the effective Al 2 O 3 thickness can be further reduced through the annealing process with a low oxygen composition of TiO x , increasing the pristine current while lowering the forming voltage and the probability of overshoot current.…”

Section: Device Structure and Optimizationmentioning

confidence: 96%

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

Kim,

Park,

Hong

et al. 2024

Adv Materials Technologies

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There is a need to design a hardware synapse array appropriate for enhancing the efficiency of neuromorphic computing systems while minimizing energy consumption. This study introduces a memristor device with an AlOx overshoot suppression layer (A‐OSL) to achieve a self‐compliance effect. By optimizing each cell within the 16 × 16 crossbar array, synaptic devices are successfully fabricated with reliable characteristics and 3‐bit multilevel capabilities. In addition, the oxygen composition of TiOx and the annealing conditions are optimized to reduce the forming voltage and minimize the variation in the switching voltage. As a result, stable forming‐free characteristics are obtained through A‐OSL insertion, a reduction in forming voltage, and TiOx oxygen composition optimization. Also, target weights are accurately transferred to the A‐OSL memristor crossbar array and conducted the inference process by applying spike signals to the array following the designated time step. The spiking neural network (SNN) is demonstrated by measuring vector‐matrix multiplication (VMM) of the 16 × 16 crossbar array. The VMM results exhibit a classification accuracy of 90.80% for the MNIST dataset, which is close to the accuracy achieved by software‐based approaches, amounting to 91.85%.

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XPS study of TiOx thin films deposited on glass substrates by the sol–gel process

Cited by 17 publications

References 17 publications

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System

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XPS study of TiOx thin films deposited on glass substrates by the sol–gel process

Cited by 17 publications

References 17 publications

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Black TiOx Films with Photothermal-Assisted Photocatalytic Activity Prepared by Reactive Sputtering

Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlOx Oxidation for Neuromorphic System

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Product

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About

Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System