XPS study of TiOx thin films prepared by d.c. magnetron sputtering in Ar-O2 gas mixtures

Deoxidization mechanism of hydrogen in TiH2 dehydrogenation process

“…The spectra of Ti 0 or TiH 2 disappears at 453.5 eV, while Ti 2þ , Ti 3þ and Ti 4þ exist in the pre-oxidized TiH 2 powders heated at 300 C for 1 h. Compared with the spectra of Ti 2p from the untreated powders, the peak intensity and area of Ti 3þ decrease obviously, and the peak of Ti 2þ appears clearly at about 454 eV. However, there only exhibits the spectra of Ti 4þ in the pre-oxidized TiH 2 powders heated at 500 C for 1 h [22,26]. The oxidizing model may be reasonably presented in Fig.…”

Resistance increase in TiOx induced by annealing and voltage application

“…However, when the sputtering growth was done at high oxygen concentrations, it was possible to see Ti 2 O 3 or TiO 2 structure in XRD [5][6][7]. When these peaks were observed in our films, resistivity of the film was very high.…”

Corrosion Behavior of Reactive Sputtered Al2O3 and ZrO2 Thin Films on Mg Disk Immersed in Saline Solution

“…Gouttebaron et. al. reported that the initial increase in reactive gas flow increases the discharge voltage, thereby increasing the number of ions colliding with the target [24] . After the initial increase, the discharge voltage remains constant between 0.5-1.5 sccm oxygen flow rates.…”