2012
DOI: 10.4028/www.scientific.net/amr.620.166
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XRD Analysis of Cu-Al Interconnect Intermetallic Compound in an Annealed Micro-Chip

Abstract: Cu-Al intermetallic compound (IMC) in Cu wire-Al bond pad interconnect interface is drawing attention of researches. However, due to thin IMC thickness, the characterizations of the IMC are limited to expensive and time consuming techniques. An evaluation is performed to use common X-Ray Diffraction (XRD) technique to identify the IMC in the Cu wired micro-chip samples in powder form. Existence of mixture of CuAl and CuAl2 was first confirmed by transmission electron microscope (TEM) and energy dispersive X-ra… Show more

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Cited by 4 publications
(3 citation statements)
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“…According to Qi et al [17], the diffraction peak of the GO was around 10 • , but this peak disappeared in the compound, indicating that the GO was reduced to reduced graphene oxide (Figure 4a). XRD revealed that the main component was Fe 0 , with a diffraction peak observed at 2θ of 44.6 • , and also contained α-Fe 3 O 4 components, with diffraction peaks at 65.0 • and 35.5 • and a characteristic peak at 2θ of 23.8 • CuO [31,32]. Figure 4 shows that there was no excess impurity peak on the surface of the prepared rGO/Fe/Cu, which indicated that the purity of the rGO/Fe/Cu prepared by this method was high.…”
Section: Resultsmentioning
confidence: 99%
“…According to Qi et al [17], the diffraction peak of the GO was around 10 • , but this peak disappeared in the compound, indicating that the GO was reduced to reduced graphene oxide (Figure 4a). XRD revealed that the main component was Fe 0 , with a diffraction peak observed at 2θ of 44.6 • , and also contained α-Fe 3 O 4 components, with diffraction peaks at 65.0 • and 35.5 • and a characteristic peak at 2θ of 23.8 • CuO [31,32]. Figure 4 shows that there was no excess impurity peak on the surface of the prepared rGO/Fe/Cu, which indicated that the purity of the rGO/Fe/Cu prepared by this method was high.…”
Section: Resultsmentioning
confidence: 99%
“…In FIB, a thin lamella with dimension 10µm x 10µm x 0.1µm was extracted from the peripheral bonding interface consisting Si, Al bond pad and Cu ball bond. Equipments and process parameters used in these processes were similar to that of [3,8], except that the bonding temperatures evaluated in this work was 100°C and the location of lamella extraction was performed at the high stress region. Lamellas were then inspected by FEI TECNAI G 2 F20 system which is capable for Transmission Electron Microscope (TEM)/Scanning TEM (STEM) imaging with high angle annular dark field (HAADF) feature and line scan Energy Dispersive X-ray (EDX).…”
Section: Methodsmentioning
confidence: 99%
“…The annealing condition for Thermosonic Cu-Al system is commonly referring to High Temperature Storage (HTS), i.e. a standard annealing or aging process (typical temperature of 175°C) for assessing the long term reliability performance of the component in micro-electronics industry [8]. The common belief is that the IMC formation at the bonding interface is highly correlated to the reliability of the bonding and thus that of the component.…”
Section: Introductionmentioning
confidence: 99%