XUV spectroscopy of metal atoms

Resonant photoemission spectra of cubic Ηg0.94Fe0.06S were measured for photoii energies near to the energy of intra atomic Fe 3p6 3d6 -^ 3p 5 3d 7 transition. The difference between the spectra taken at resonance and antiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.PACS numbers: 79.60.-i Many of the diluted magnetic semiconduction (DMS) based on II-VI compounds have been extensively investigated since the 70s. Their electric, magnetic and optical properties were determined and band stuctures described [1][2][3][4][5]. However, this is still not the case for those solid solutions which would contain mercury sulphide as a non magnetic component. This compound is an exception among the other, tetrahedrally bonded, members of the II-VI family. Its natural form (α-HgS) is a wide gap semiconductor of a cinnabar crystal lattice. The cubic modification of mercury sulphide, β-ΗgS, is stable at above 550 Κ but it transforms upon cooling into α-ΗgS [6]. Thus, big size, bulk monocrystals of cubic HgS have not been available to experimentation until quite recently. Some information about crystal stucture and electronic properties was obtained from experiments performed for a powder produced by chemical precipitation [7], a natural polycrystalline material highly doped with Fe (metacinnabar) [8], or vacuum-evaporated thin films [7].However, a technique of stabilization of the cubic lattice in big monocrystals of HgS grown by means of an equilibrium method has been recently proposed [9]. It is based on doping the crystals with a transition metal (e.g. Fe, Co) or selenium. That achievement made it possible to investigate further properties of β-ΗgS with prospects to compare the results with those known for HgTe and HgSe as well as for the cinnabar form of HgS. Moreover, a new group of solid solutions (DMS, among others) has been obtained. The opportunity arose to fjll the gap in the set of data concerning properties of II-VI based diluted magnetic semiconductors.(791)

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“…For Fe containing compounds we observe Fe 3p6 3d6 +hv -> 3p6 3d5 + e-and Fe 3p6 3d6 +hv -> 3p5 3d7 -> 3p6 3d5 + e - [19].…”

Section: Bj Kowalski Et Almentioning

confidence: 72%

Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

et al. 1995

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“…Having in mind the treatment in [13], the process of the formation of clusters in the vapor stream is determined by its density. This last can be estimated through the total X-ray°ux as 10 13 cm ¡3 , and it is not enough for cluster e®ects. The removal of the outer shell electrons also causes shifts of the CXL lines [14].…”

Section: Discussionmentioning

confidence: 99%

“…Only a few special articles dealing withfree atoms can be found (see, e.g., [9]). Investigation of the X-ray spectra of free atoms has been aimed mostly at the study of the X-ray absorption of vapors created in high temperature furnaces [10]. The¯rst measurements of CXL of free atoms with the help of a new electron beam method [2][3][4][5] produced information about their wavelengths with an accuracy of ¢ ¶ = ¶ º10 ¡5 .…”

mentioning

confidence: 99%

The characteristic X-ray spectra of free atoms of metals

Antsiferov¹

2003

Open Physics

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Abstract:The article presents the results of a study of characteristic X-ray spectra of free atoms by means of a new simple technique. A pulsed electron beam was used for evaporation and to create inner-shell vacancies in free atoms of metals. The spectra were obtained with the help of an X-ray monochromator which allowed precise comparison between the free-atoms spectra and corresponding solid-state spectra. The shifts of the peaks were measured and found to be in the range ¢ ¶ = ¶ º10 ¡5 {10¡4 . The K-, L-and Mseries spectra were studied. A number of the free-atoms spectra revealed structure which was not resolved in the solid-state spectra and which is of interest for atomic structure calculation applications. This electron beam technique for the investigation of X-ray characteristic spectra of free atoms can be used for the re nement of X-ray wavelength standards.

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“…doped crystal or organic compounds). The anomaly strong Fano-type resonance [8][9][10] correlated to the highly localized transitions 3p 6 −3d n or 4d 10 −4f n in transition metal [10][11][12][13][14][15][16][17][18][19][20] or rare-earth [20][21][22][23][24][25][26][27][28][29][30][31][32] atoms, respectively, were observed and applied for study of electronic structure and contribution of the states of these atoms to the semimagnetic or magnetic semiconductors valence band electronic structure. Continuous, high intensity and tunable light source gives the possibility to study particular resonance transition effects appearing for single isolated atoms as well as for atoms incorporated in the clusters, liquids, volume of the solids or their surface.…”

Section: Introductionmentioning

confidence: 99%

“…Resonant photoemission spectroscopy (RPES) [8][9][10] is presented in the paper as a good example for application of the tunable ultraviolet light source in the range of energy from 10 to 200 eV for an electronic structure study of the crystal surface and volume. In this technique the radiation energy hν is tuned to the resonant electron transition, e.g.…”

Section: Introductionmentioning

confidence: 99%

Resonant Photoemission Study οf 4f Electrons on the Surface οf Semiconductors

et al. 2008

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The contribution of 4f electrons to the electronic structure of the semiconductor clean surface caused by the surface doping of it by rare-earth metal atoms (Eu, Sm) will be presented. The surface doping was performed by the controlled, sequential deposition of the rare-earth metal atoms on the clean surface in UHV conditions (Sm on GaN or CdTe) or by the doping of the layer volume of (EuGd)Te. After each deposition or surface treatment the synchrotron radiation was used to measure in situ the resonant photoemission spectra (the Fano type resonance) to study the contribution of 4f electrons of divalent and trivalent Sm and Eu ions to the valence band electronic structure of created sample. The first stages of the metal atoms deposition lead to the surface doping. Further metal atoms deposition leads to the growth of the metallic islands on the surface and causes the appearance of the sharp metallic Fermi edge in the energy distribution curves. Proper coverage and annealing of the sample surface with metal atoms leads to the diffusion of the metal atoms into the sample and results in an increase in the crystal doping and decrease in the metallic islands contribution to the measured spectra. As a result, the new electronic structure of the valence band can be created and investigated in situ.

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XUV spectroscopy of metal atoms

Cited by 182 publications

References 310 publications

Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

The characteristic X-ray spectra of free atoms of metals

Resonant Photoemission Study οf 4f Electrons on the Surface οf Semiconductors

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XUV spectroscopy of metal atoms

Cited by 182 publications

References 310 publications

Fe 3d Contribution to the Valence Band of Cubic Hg1-xFexS - Resonant Photoemission Study

Fe 3d Contribution to the Valence Band of Cubic Hg1-xFexS - Resonant Photoemission Study

The characteristic X-ray spectra of free atoms of metals

Resonant Photoemission Study οf 4f Electrons on the Surface οf Semiconductors

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Product

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Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study

Fe 3d Contribution to the Valence Band of Cubic Hg_1-xFe_xS - Resonant Photoemission Study