“…[4][5][6] As we know, the traditional buffer layer materials such as SrTiO 3 , RE 2 O 3 , La 2 Zr 2 O 7 and CeO 2 can be obtained in relatively higher annealing temperatures superior to 900°C even in reduced atmosphere for their high melting points. 7 In addition, many current preparation methods for the buffer layers need long treating time about 5-15 h, [8][9][10] which distinctly augments the production cost of the buffer layers. However, SmBiO 3 (SBO) buffer layer developed by our group can realise phase evolution at lower temperatures around 800°C, 11,12 and its constitutes, structures as well as properties are systematically characterised reported in Zhang et al 13 and Bellakki et al 14 SBO lattice mismatch with corresponding YBCO, NiO, LaAlO 3 (LAO) and yttria-stabilised zirconium (YSZ) is strictly restrained inferior to 2, 6.7, 3.1 and 7%, respectively, which is beneficial to the epitaxial growth of SBO buffer layers on different substrates and of YBCO layers on SBO templates.…”