Y-Doped BaTiO<sub>3</sub> as a Charge-Trapping Layer for Nonvolatile Memory Applications

Shi, Runpu; Huang, Xiaodong; Sin, J.K.O.; Lai, P. T.

doi:10.1109/led.2016.2615063

Cited by 16 publications

(5 citation statements)

References 25 publications

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“…Incorporation of 20 nm BTO with various BTO loading ratio was performed to elucidate the difference in hysteresis window. 20 nm BTO significantly enhanced the hysteresis window as compared to PSX devices with an improvement in clockwise hysteresis shift (Δ V H ) of 0.5 V compared to PSX with 0 V. Clockwise hysteresis (CW) direction was primarily associated to charge trapping mechanism which was widely studied for non-volatile memory application. − Within BTO nanoparticles, there are many defects such as oxygen vacancies and positively charged traps due to ionic bonding that has poor ability to remove the defects. The incorporation of 20 nm BTO loading successfully lead to the Δ V H by Ti 4+ acting as electron trapping sites thus contributing to a wider hysteresis window due to its lower ionization energy.…”

Section: Resultsmentioning

confidence: 99%

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Safaruddin,

Bermundo,

et al. 2023

ACS Omega

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Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high-k nanodielectric films. Transition from the ferroelectric to paraelectric phase of BTO with different nanoparticle dimensions was evaluated through variable-temperature X-ray diffraction measurement accompanied by electrical analysis using capacitor structures. A symmetric single 200 peak was constantly detected at different measurement temperatures for the 20 nm BTO sample, marking a stable cubic crystal structure. 100 nm BTO on the other hand shows splitting of 200/002 peaks correlating to a tetragonal crystal form which further merged, thus forming a single 200 peak at higher temperatures. Smaller BTO dimension exhibits clockwise hysteresis in capacitance–voltage measurement and correlates to a cubic crystal structure which possesses paraelectric properties. Bigger BTO dimension in contrast, demonstrates counterclockwise hysteresis owing to their tetragonal crystal form. Through further Rietveld refinement analysis, we found that the tetragonality (c/a) of 100 nm BTO decreases at a higher temperature which narrows the hysteresis window. A wider hysteresis window was observed when utilizing 100 nm BTO compared to 20 nm BTO even at a lower loading ratio. The present findings imply different hysteresis mechanisms for BTO nanoparticles with varying dimensions which is crucial in understanding the role of how the BTO size tunes the crystal structures for integration in thin-film transistor devices.

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Section: Resultsmentioning

confidence: 99%

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Safaruddin,

Bermundo,

et al. 2023

ACS Omega

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“…These results not only demonstrate the substantial impact of defect passivation in efficient and high-frequency pulse voltage operations, but also pave the way to overcome the current challenges and thereby replace the existing technologies with the promising PeLEDs active light source in VLC link platform. [52,53] For examples, there are two strategies to improve the communication capability by using PeLEDs. First, the micro-PeLEDs can reducing the parasitic capacitance of the device, [16] and the nearly linear increase of the f −3 dB with decreasing device area.…”

Section: Discussionmentioning

confidence: 99%

Enhanced Charging/Discharging Process in Perovskite Active Light Source for High‐Speed Visible‐Light Communication

Zhang,

Tang,

Chen

et al. 2023

Advanced Optical Materials

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Metal halide perovskites are promising light source materials for visible light communication (VLC) due to their excellent photoelectric properties and small resistance‐capacitance time constant. However, previous reports mainly used perovskites as the passive light sources, which not only makes it susceptible to posterior excitation light sources, but also complex in the integration process. Herein, the quasi‐2D PEA2Csn‐1PbnBr3n+1 perovskite light–emitting diodes (PeLEDs) as an active light source in VLC link is demonstrated. It is found that the charging/discharging process of PeLEDs is an important factor governing the ‐3 dB bandwidth (f‐3 dB) of the VLC. To improve this, 3‐sulfopropyl methacrylate potassium salt (SMPS) molecules are introduced into perovskite to simultaneously passivate deep and shallow energy level defects at grain boundaries. Additionally, the multiple quantum wells structures of PEA2Csn‐1PbnBr3n+1 are modified to be flat. At the optimal SMPS concentration, the maximum external quantum efficiency of PeLEDs reaches 21.5%. Meanwhile, the VLC achieves 3.2 MHz f‐3 dB with data transmission of 18.6 Mbps, which is the highest f‐3 dB in PeLEDs with the same active area. Hence, it provides a versatile method to improve the performance of VLC links based on active light sources and advances toward the goal of high‐speed, energy‐efficient and secure free communication.

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“…The typical 3 dB modulation bandwidth of c ‐plane InGaN QW micro‐LEDs can be improved to several hundreds of MHz under high injection current density beyond kA cm −2 or even 10 kA cm −2 as high‐density carriers can not only improve the recombination rate but also screen the polarization electric field. [ 31–35 ] However, an extremely high current density implies larger power consumption, severe heat generation, and shorter service life. Semipolar or nonpolar LEDs appear to be the fundamental solution of this problem as they can almost eliminate the polarization field with a 3 dB bandwidth exceeding 1 GHz under a relatively low current density.…”

Section: Introductionmentioning

confidence: 99%

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Wang

Chen

et al. 2021

Laser & Photonics Reviews

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Micro‐LEDs are regarded as ideal light sources for next‐generation display and high‐speed visible‐light communication (VLC). However, the conventional micro‐LEDs based on InGaN quantum well (QW) active region suffer from a low efficiency under small injection (below 1 A cm−2) due to the size‐dependent effect and a limited 3 dB bandwidth (hundreds of MHz) due to quantum‐confined Stark effect. Here, InGaN quantum dots (QDs) are proposed as the active region of micro‐LEDs to address these challenges for their strong localization and low‐strain features. Green InGaN QDs are self‐assembled under Stranski–Krastanov (SK) and Volmer–Weber (VW) modes by using metal organic vapor phase epitaxy. The SK QDs can shift the peak efficiency of a micro‐LED to an extremely low current density of 0.5 A cm−2 (almost two orders of magnitude lower compared to QW ones) with an external quantum efficiency of 18.2% (nearly two times higher than present green micro‐LEDs). Besides, green micro‐LEDs based on VW QDs reach a 3 dB bandwidth of 1.3 GHz. These results indicate that InGaN QDs can provide an ultimate solution to micro‐LEDs for display and VLC applications, especially since they are fully compatible with current light‐emitting diode (LED) industrial technology.

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Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications

Cited by 16 publications

References 25 publications

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Enhanced Charging/Discharging Process in Perovskite Active Light Source for High‐Speed Visible‐Light Communication

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

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Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

Cited by 16 publications

References 25 publications

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Enhanced Charging/Discharging Process in Perovskite Active Light Source for High‐Speed Visible‐Light Communication

Green InGaN Quantum Dots Breaking through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

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Y-Doped BaTiO₃ as a Charge-Trapping Layer for Nonvolatile Memory Applications