2022
DOI: 10.1016/j.ceramint.2021.10.097
|View full text |Cite
|
Sign up to set email alerts
|

Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 23 publications
(3 citation statements)
references
References 36 publications
0
3
0
Order By: Relevance
“…8–11 For decades, TiN has been employed as a DRAM capacitor electrode because the crystallinity of TiN is coherent with ZrO 2 4,12 and it has a facile deposition process. 13,14 However, TiN exhibits a relatively low work function (4.2 eV) 15 and inadequate crystallinity when combined with higher- k dielectrics such as TiO 2 and SrTiO 3 , 16,17 limiting its application to next-generation DRAM devices.…”
Section: Introductionmentioning
confidence: 99%
“…8–11 For decades, TiN has been employed as a DRAM capacitor electrode because the crystallinity of TiN is coherent with ZrO 2 4,12 and it has a facile deposition process. 13,14 However, TiN exhibits a relatively low work function (4.2 eV) 15 and inadequate crystallinity when combined with higher- k dielectrics such as TiO 2 and SrTiO 3 , 16,17 limiting its application to next-generation DRAM devices.…”
Section: Introductionmentioning
confidence: 99%
“…Noticeably, in the dielectric composite field, very little research has focused on the crystal structure of inorganic fillers. Nevertheless, the different crystal structures can substantially lead to differences in lattice arrangement, atomic distance, and cell symmetry, thus affecting their electrical properties. For example, the cubic HfO 2 (c-HfO 2 ) and monoclinic HfO 2 (m-HfO 2 ), as two common crystal structures of HfO 2 , were demonstrated to have different dielectric constants in the same electric field. , Therefore, it is crucial to further clarify the influence of crystal structures on the dielectric properties of nanocomposites and summarize a relatively more ideal crystal structure of HfO 2 for dielectric materials.…”
Section: Introductionmentioning
confidence: 99%
“…Nano/micro particles (NMP) constitute new materials for dynamic random-access memory (DRAM) and central processing units (CPU). The properties of NMPs are mainly determined by size, shape, and composition . In the case of composite NMPs with metal–support interaction (MSI), an interaction between the main component of the particles and the support consisting of the nucleus and the metal surrounding the nucleus has the greatest influence on the properties of NMPs. Generally, MSIs include charge transfer, interfacial boundary, morphology of NMPs, chemical composition, and strong metal support interaction. Therefore, studies have been reported to solve the stability of the support while improving electrical properties of the metal catalyst by coating the existing performance stabilized support with a metal serving as a catalyst .…”
Section: Introductionmentioning
confidence: 99%