Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates

Abstract

PACS 78.20.Ci, 78.55.Et, 78.66.Hf, 81.05.Dz, 81.15.Hi, 85.60.Jb II-VI compound materials containing beryllium-chalcogenides such as BeZnTe, ZnCdSe/BeZnTe, and MgSe/BeZnTe superlattices grown on InP substrates have been investigated for yellow-green emitters employing molecular beam epitaxy. Photoluminescence peaks of ZnCdSe/BeZnTe superlattices were widely controlled from 740 to 507 nm by changing the layer thickness combination. Applying ZnCdSe/BeZnTe and MgSe/BeZnTe superlattices, visible light emitting diodes (LEDs) were fabricated emitting at the wavelengths from 554 (yellow-green) to 644 nm (red) at room temperature. For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated. Laser diodes consisting of a ZnCdSe active, a MgSe/ZnCdSe superlattice n-cladding, and a MgSe/BeZnTe superlattice p-cladding layers successfully operated with yellow-green lasing emissions around 560 nm at 77 K.

Electronic and optical properties of beryllium chalcogenide/silicon heterostructures

“…9 Beryllium chalcogenides have attracted much attention for the blue wavelength of region light emitting devices or UV detectors. 10,11 They provide long life-time II-VI lasers because of the strong covalent bonding of Be. BeTe and BeSe are wide-bandgap zinc blende semiconductors with lattice constants on either side of Si: they have the lattice constants of 5.6269 and 5.1477 Å, respectively, 3.6 % larger and 5.2 % smaller than Si.…”

First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates

“…ZnSebased materials, such as ZnSSe and MgZnSSe, grown on GaAs substrates have been investigated for blue-green laser diodes (LDs); then room-temperature (RT) continuous-wave (CW) lasing was reported for ZnCdSe/MgZnSSe LDs [1,2]. However, the device lifetimes of the LD was tested to be too short for practical use; the lifetime was limited to be approximately 400 h. At the same time, we developed other II-VI compound semiconductors such as MgZnCdSe, BeZnTe, and BeZnSeTe grown on InP substrates for yellow-to-green LDs and light-emitting diodes (LEDs) [3,4]. MgZnCdSe can be used for n-cladding layers because it has wide bandgap energies from 2.1 to 3.8 eV and a high n-doping property.…”

Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates

“…On the other hand, we have pointed out different II-VI compounds such as MgZnCdSe, BeZnTe, and BeZnSeTe grown on InP substrates. [9][10][11][12][13] Especially, BeZnSeTe ͑Ref. 11͒ having direct bandgap energies from 2.1 ͑590 nm͒ to 2.7 eV ͑460 nm͒ is a promising active layer material for highly reliable yellow-to-green LDs and light emitting diodes ͑LEDs͒.…”