Yellow luminescence in Mg-doped GaN

Sánchez, F. J.; Calle, F.; Basak, Durga; Tijero, J. M. G.; Sánchez-García, M.Á.; Monroy, E.; Calleja, E.; Muñoz, E.; Beaumont, B.; Gibart, P.; Serrano, J. J.; Blanco, J.M.

doi:10.1557/s109257830000154x

Cited by 10 publications

(7 citation statements)

References 17 publications

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“…The broad blue-violet emission has also been observed by low temperature PL in highly Mg-doped GaN layers [7]. This band blue-shifts by around 100 meV for a 2-decade increasing excitation intensity [9] [13], in the same way as observed for the visible emission in EL spectra for increasing current.…”

Section: Electroluminescence Spectral Response and L-i Characteristicssupporting

confidence: 64%

“…The yellow emission, from shallow donors to an acceptor (YBA in Figure 10), is likely to occur in the n-type region, as suggested by the fact that it is not observed in the PL spectra of heavily doped GaN [7]. Deep acceptors in n-type GaN have been attributed to VGa-H complexes [27].…”

Section: Levels Modelmentioning

confidence: 98%

“…Because of the large activation energy and the formation of these complexes, a post-growth treatment of the p-type layer is also needed, either by low-energy electron-beam irradiation [3] or by thermal treatment in N 2 ambient [4]. In spite of activation treatments [5], the presence of deep level centers or complexes have been demonstrated in highly doped p-type GaN by deep level transient spectroscopy [6], photocapacitance [7], and photoluminescence (PL) [5] [7] [8] [9]. However, the donor or acceptor nature of these defects is still under debate.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Calle

Monroy

Sánchez

et al. 1998

MRS Internet j. nitride semicond. res.

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The electrical and electroluminescent properties of MOVPE GaN p-n homojunctions have been analyzed as a function of temperature and bias. Electroluminescence is observed for V>3 V under dc and ac conditions. The main emission at low T is a donor-acceptor transition involving shallow acceptors, though it disappears at higher T due to the ionization of the acceptors and compensation by ionized donors. Room temperature dc and ac electroluminescence spectra evolve under increasing bias from a blue-shifting visible band involving deep states at the p-type side of the p-n junction, to a band-to-band UV recombination at high bias. In agreement, the superlinear dependence of light-current characteristics at low current injection becomes linear when the defects are saturated. Time analysis of the spectra vs pulse duration and duty cycle allows the determination of the visible radiative recombination and relaxation times associated to the Mg-related deep states, which are found to behave as acceptors lying 0.55 eV above the valence band. A simple 3-level model is able to explain the visible emission, which involves the conduction band (or shallow donor) and those deep acceptors in the p-layer. Optimum UV/visible ratio emission requires intense and relatively long pulses, with a high duty cycle to impede visible recombination.

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Section: Electroluminescence Spectral Response and L-i Characteristicssupporting

confidence: 64%

Section: Levels Modelmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Calle

Monroy

Sánchez

et al. 1998

MRS Internet j. nitride semicond. res.

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“…Excitation density-resolved CL spectra of thermally activated, Mgdoped, p-type GaN taken at 220 K for different EB excitation densities (E b ϭ10 keV, I b ϭ0.025,...,10.0 nA, probing area: 89 mϫ71 m͒. 21 Although the YL has previously been reported in highly compensated Mg-doped GaN, 15,16 particularly with subband-gap PL excitation, 24 it is generally not observed by PL in lightly Mg-doped, p-type GaN. Solid and dashed lines represent spectra of as-received and LEEBI regions, respectively.…”

Section: Low-energy Electron-beam Irradiation and Yellow Luminescencementioning

confidence: 95%

Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN

Gelhausen

Klein

Phillips

et al. 2003

Applied Physics Letters

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The effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following the LEEBI treatment, the ubiquitous shallow donor–acceptor-pair emission at 3.27 eV decreased, while a deeper DAP emission at ∼3.1 eV dramatically increased in intensity, and a broad yellow luminescence band centered at 2.2 eV evolved. The results clearly indicate that the centers involved in the 3.27 eV transition are not stable during irradiation by low-energy electrons. Further, we report that the LEEBI-treatment not only dissociates neutral Mg-H complexes as intended, but simultaneously dissociates other hydrogenated defect complexes, giving rise to additional radiative recombination channels.

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“…Based on previous measurements of GaN:Mg, the electrically active Mg acceptor level luminescences strongly at 2.9-3.2 eV. 18 Figure 3 shows no clear indication of such luminescence. Hence, the "buried" interface CLS measurements provide no evidence to suggest incorporation of Mg within the GaN lattice occurring at the interfacial regime.…”

Section: Discussionmentioning

confidence: 70%